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Электронный компонент: 2SC5060

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2SC5060
Transistors
Rev.A
1/3
Power transistor (90
10V, 3A)
2SC5060

Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to "L"
loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.

Equivalent circuit
R
2
R
1
B
C
E
C
B
E
: Base
: Collector
: Emitter
R
1
3k
R
2
1k
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
90
10
90
10
6
1
2
1
1
2
150
-
55 to
+
150
Unit
V
V
V
A(DC)
A(Pulse)
W
C
C
1 Single pulse Pw
=
10ms
2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm
2
.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and h
FE
Type
2SC5060
ATV
M
TV2
2500
Package
h
FE
Code
Basic ordering unit (pieces)
External dimensions (Unit : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
ROHM : ATV














Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
80
80
-
-
-
1000
-
-
-
-
-
-
-
-
80
20
100
100
10
3
1.5
5000
-
-
V
V
A
mA
V
-
MHz
pF
I
C
=
50
A
I
C
=
1mA
V
CB
=
70V
V
EB
=
5V
I
C
/I
B
=
500mA/1mA
V
BE(sat)
-
-
2
1
2
1
V
I
C
/I
B
=
500mA/1mA
V
CE
=
3V, I
C
=
0.5A
V
CB
=
5V, I
E
=-
0.1A, f
=
30MHz
V
CE
=
10V, I
E
=
0A, f
=
1MHz
t
on
-
0.2
-
s
I
C
=
0.8A, R
L
=
50
t
stg
-
5
-
s
I
B1
= -
I
B2
=
8mA
t
f
-
0.6
-
s
V
CC
40V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BV
EBO
6
-
-
V
I
E
=
5mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
1
Measured using pulse current.
2
Transition frequency of the device.
2SC5060
Transistors
Rev.A
2/3
Electrical characteristics curves
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.1 Ground emitter propagation characteristics
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
V
CE
=
3V
Ta
=
100
C
25
C
-
25
C
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Ground emitter output characteristics( )
0
1
2
3
4
5
0
0.4
0.8
1.2
1.6
2.0
Ta
=
25
C
I
B
=
0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.1mA
0.2mA
0.3mA
0.4mA
1mA
0.5mA
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.3 Ground emitter output characteristics( )
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
Ta
=
25
C
I
B
=
0mA
0.7mA
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
1mA

COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter saturation voltage
vs. collector current
COLLECTOR SATURATION VOLTAGE
: V
CE(sat)
(V)
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.1
0.2
0.5
1
2
5
10
20
50
100
Ta
=
25
C
500
I
C
/I
B
=1000
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector current ( )
DC CURRENT GAIN : h
FE
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
10
20
50
100
200
500
1k
2k
5k
10k
Ta
=
25
C
3V
4V
V
CE
=5V
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
10
20
50
100
200
500
1k
2k
5k
10k
COLLECTOR CURRENT : I
C
(A)
Fig.5 DC current gain vs. collector current( )
DC CURRENT GAIN : h
FE
Ta
=
100
C
25
C
-
25
C
V
CE
=3V


Fig.8 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : C
ob
(pF)
0.1
0.2
0.5
1
2
5
10
20
50 100
1
2
5
10
20
50
100
200
500
1000
COLLECTOR TO BASE VOLTAGE : V
CB
(A)
Ta
=
25
C
f
=
1MHz
I
E
=
0A
COLLECTOR CURRENT : I
C
(A)
Fig.7 Collector-emitter saturation voltage
Base-emitter saturation voltage vs. collector current
COLLECTOR SATURATION VOLTAGE
: V
CE(sat)
(V)
BASE SATURATION VOLTAGE
: V
CE(sat)
(V)
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.1
0.2
0.5
1
2
5
10
20
50
100
Ta
= -
25
C
V
BE(sat)
V
CE(sat)
25
C
100
C
-
25
C
25
C
100
C
I
C
/I
B
=
500
0.01 0.02
0.05
0.1
0.2
0.5
1
2
5
10
0.1
0.2
0.5
1
2
5
10
20
50
100
COLLECTOR CURRENT : I
C
(A)
Fig.9 Switching characteristics
TURN ON TIME : t
on
(
s)
STORAGE TIME : t
stg
(
s)
FALL TIME : t
f
(
s)
I
C
=
100I
B1
= -
100I
B2
Ta
=
25
C
t
on
t
f
t
stg
2SC5060
Transistors
Rev.A
3/3
0.1
0.2
0.5
1
2
5
10
20
50 100
10m
20m
50m
100m
200m
500m
1
2
5
10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operating area
COLLECTOR CURRENT : I
C
(A)
Ta
=
25
C
Single
nonrepetitive
pulse
I
C(MAX)
(Pulse
)
DC
Pw
=
1ms
10ms
100ms
Collector current waveform
Base current waveform
V
IN
~
-
+
V
BB
P
W
P
W
50 S
Duty cycle 1%
I
B1
I
B1
90%
10%
I
B2
I
B2
I
C
~
-
-
V
BB
I
C
R
L
=
50
V
CC
40V
t
on
t
stg
t
f
T.U.T
Fig.11 Switching time mesurement circuit
Appendix
Appendix1-Rev1.1


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(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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