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Электронный компонент: 2SC5663

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2SC5585 / 2SC5663
Transistors
Rev.B
1/2
Low frequency transistor (12V, 0.5A)
2SC5585 / 2SC5663


The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.

Applications
For switching
For muting

Features
1) High current.
2) Low V
CE(sat)
.
V
CE(sat)
250mV at I
C
= 200mA / I
B
= 10mA








External dimensions (Unit : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.6
1.0
0.3
0.8
(2)
0.5
0.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
Absolute maximum ratings (Ta=25
C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
I
C
P
C
Tj
Tstg
15
V
V
mA
mW
C
C
12
Emitter-base voltage
V
EBO
V
6
500
I
CP
A
1
150
150
-
55 to +150
Symbol
Limits
Unit
Single pulse Pw = 1ms

Electrical characteristics (Ta=25
C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE(sat)
Cob
Min.
15
12
6
-
270
-
-
-
-
-
-
-
90
7.5
-
-
-
100
680
250
-
V
I
C
= 10
A
I
C
= 1mA
I
E
= 10
A
V
CB
= 15V
V
CE
= 2V, I
C
= 10mA
I
C
= 200mA, I
B
= 10mA
V
CB
= 10V, I
E
= 0A, f = 1MHz
V
V
nA
Emitter cutoff current
I
EBO
-
-
100
V
CB
= 6V
nA
-
mV
f
T
-
320
-
V
CE
= 2V, I
E
=
-
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
2SC5585 / 2SC5663
Transistors
Rev.B
2/2

Packaging specifications
Package
Code
Taping
Basic ordering
unit (pieces)
h
FE
2SC5663
2SC5585
T2L
8000
TL
3000
-
-
Type
Electrical characteristic curves
0
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
100
0.5
1.0
1.5
V
CE
= 2V
1000
Ta =
1
25
C
25
C
-40
C
2
5
20
50
200
500
1
2
5
10
20
50
100 200
500
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
10
DC CURRENT GAIN : h
FE
1000
20
50
100
200
500
1000
Ta = 125
C
5
2
1
V
CE
= 2V
25
C
-40
C
1
2
5
10
20
50
100
200
I
C
/I
B
= 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
)
Ta = 125
C
500
1000
25
C
-40
C
1
2
5
10
20
50
100
200
Ta = 25
C
1
2
5
10
20
50
100 200
500 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
)
I
C
/I
B
=
50
500
1000
20
10
10
20
50
100
200
500
1000
2000
I
C
/I
B
= 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Ta = -40
C
5000
10000
25
C
125
C
2
1
5
10
20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
Ta = 25
C
V
CE
= 2V
f
T
(
MH
Z
)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage
Pulsed
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta = 25
C
I
E
= 0A
f
= 1MHz
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
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