2SD1383K / 2SC1645S
Transistors
Rev.A
1/3
High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K / 2SC1645S
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k
resistor between base and emitter.
3) Complements the 2SD852K / 2SA830S.
Circuit diagram
R
BE
4k
E : Emitter
B : Base
C : Collector
C
B
E
Packaging specifications
Type
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
2SD1383K
SMT3
B
W
T146
3000
2SC1645S
SPT
B
-
TP
5000
Denotes h
FE
External dimensions (Unit : mm)
Each lead has same dimensions
2SD1383K
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
2.8
1.6
0.4
(3)
2.9
1.9
0.95
0.95
0.8
0.15
0.3Min.
1.1
Taping specifications
2SC1645S
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0
2.0
(1)Emitter
(2)Collector
(3)Base
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
40
32
6
0.3
0.2
150
-
55 to
+
150
1
2
Unit
V
V
V
A (DC)
1.5
A (Pulse)
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1
R
BE
=
0
2
Single pulse Pw=10ms
2SD1383K / 2SC1645S
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
-
250
-
MHz
V
CE
=
5V, I
E
= -
10mA, f
=
100MHz
BV
CBO
40
-
-
V
I
C
=
100
A
BV
CEO
32
-
-
V
I
C
= -
1mA , R
BE
=0
BV
EBO
6
-
-
V
I
E
=
100
A
I
CBO
-
-
1
A
V
CB
=
24V
I
EBO
-
-
1
A
V
EB
=
4.5V
V
CE(sat)
5000
-
-
-
I
C
=
200mA, I
B
=
0.4mA
h
FE
-
-
1.5
V
V
CE
=
5V, I
C
=
0.1A
Cob
-
5
-
pF
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
1
Measured using pulse current.
2
Transition frequency of the device.
Electrical characteristic curves
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta
(
C)
Fig.1 Power dissipation curves
0
25
50
75
100
125
POWER DISSIPATION : P
C
/P
CMax
(%)
Fig.2 Ground emitter propagation characteristisc
0.4
0
0.8
1.2
1.6
2.0
2.4
2.8
3.2
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
2
5
10
20
50
100
200
500
COLLECTOR CURRENT : I
C
(mA)
V
CE
=
6V
Ta
=
100
C
Ta
=
25
C
Ta
= -
55
C
Fig.3 Ground emitter output characteristics
0
1
50
100
2
3
4
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
COLLECTOR CURRENT : I
C
(mA)
5
Ta=25
C
3
A
4
A
9
A
8
A
7
A
6
A
5
A
I
B
=10
A
Fig.6 Collector-emitter saturation voltage
vs. collector current
0.5
1
2
5
100
200
500 1000
2000
0.1
0.2
0.5
1
2
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
I
C
/I
B
=500
Ta=
-
55
C
100
C
25
C
Fig.5 DC current gain vs. collector current (
)
5
10
20
50 100
200
500 1000
2000
20000
10000
5000
50000
100000
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
V
CE
=5V
Ta=100
C
25
C
-
55
C
Fig.4 DC current gain vs. collector current (
)
5
10
20
50 100
200
500 1000
2000
20000
10000
2000
1000
500
5000
50000
COLLECTOR CURRENT : I
C
(mA)
DC CURRENT GAIN : h
FE
Ta=25
C
V
CE
=3V
5V
2SD1383K / 2SC1645S
Transistors
Rev.A
3/3
Fig.9 Emitter input capacitance
vs. emitter-base voltage
1
2
5
10
1
2
5
10
20
EMITTER TO BASE VOLTAGE : V
EB
(V)
EMITTER INPUT CAPACITANCE : Cib (pF)
f=1MHz
I
E
=0A
Ta=25
C
Fig.8 Collector output capacitance
vs. collector-base voltage
1
2
5
10
20
50
2
5
10
20
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
OUTPUT CAPACITANCE : Cob (pF)
f=1MHz
I
E
=0A
Ta=25
C
Fig.7 Gain bandwidth product vs. emitter current
-
1
-
2
-
5
-
10
-
20
-
50
-
100
50
100
200
500
EMITTER CURRENT : I
E
(mA)
TRANSISION FREQUWNCY : f
T
(MHz)
V
CE
=6V
Ta=25
C
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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ROHM CO., LTD. is granted to any such buyer.
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About Export Control Order in Japan
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