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Электронный компонент: 2SD1733

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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 /
2SD1381F
!Features
1) High V
CEO
, V
CEO
=80V
2) High I
C
, I
C
=1A (DC)
3) Good h
FE
linearity
4) Low V
CE
(sat)
5) Complements the 2SB1260 /
2SB1241 / 2SB1181
!Structure
Epitaxial planer type
NPN silicon transistor
!External dimensions
(Units : mm)
(1) Emitter
(2) Collector
(3) Base
ROHM : TO-126FP
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SD1768S
2SD1381F
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
2SD1863
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
2SD1733
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1898
Abbreviated symbol : DF
-
0.1
+
0.2
-
0.05
+
0.1
-
0.1
+
0.2
+
0.2
-
0.1
(3)
(2)
(1)
4.00.3
1.00.2
0.50.1
2.5
3.00.2
1.50.1
1.50.1
0.40.1
0.50.1
0.40.1
0.4
1.5
4.5
1.60.1
-
0.1
+
0.2
+
0.3
-
0.1
2.3
0.2
2.3
0.2
0.65
0.1
0.9
0.75
5.5
1.5
0.3
6.5
0.2
5.1
C0.5
(3)
(2)
(1)
0.9
-
0.1
+
0.2
1.0
0.2
0.55
0.1
9.5
0.5
2.5
1.5
2.3
0.5
0.1
30.2
(15Min.)
40.2
0.45
5
(1) (2) (3)
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
20.2
0.45
0.5
-
0.05
+
0.15
7.80.2
Front
3.3
Back
3.19
3.20.2
0.8
2.30.5
2.30.5
0.70.1
1.6
1.75
0.95
1.2
1.1
10.80.2
16.00.5
C0.7
(2) (3)
(1)
6.9
9.2
1.760.5
1.0
6.80.2
2.50.2
1.05
0.450.1
2.54 2.54
0.50.1
0.9
4.40.2
14.50.5
(1)
(2)
(3)
0.65Max.
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
V
CBO
100
V
Collector-emitter voltage
V
CEO
80
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
1
A (DC)
2
A (Pulse)
1
Junction temperature
Tj
150
C
Storage temperature
Tstg
-
55
+
150
C
Collector power
dissipation
P
C
0.5
2
2
1
3
10
0.3
1
1.2
W
W (Tc=25C)
W
W (Tc=25C)
1 Pw=20ms, duty=1 / 2
2 Printed circuit board 1.7mm thick, collector copper plating 1cm
2
or larger.
3 When mounted on a 40
40
0.7mm ceramic board.
5
2SD1898
2SD1733
2SD1768S
2SD1863
2SD1381F
!Electrical characteristics
(Ta=25
C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
100
80
5
-
-
-
180
2SD1863
2SD1733, 2SD1898
2SD1768S
2SD1381F
-
-
-
-
-
-
-
0.15
-
100
20
-
-
-
1
1
0.4
390
-
-
V
I
C
=50
A
I
C
=1mA
I
E
=50
A
V
CB
=80V
V
EB
=4V
I
C
/I
B
=500mA/20mA
V
CE
=10V, I
E
=
-
50mA, f
=100MHz
V
CE
=3V, I
C
=0.5A
V
CB
=10V, I
E
=0A, f=1MHz
V
V
A
A
V
-
82
-
390
-
120
-
390
-
82
-
270
-
MHz
pF
Typ.
Max.
Unit
Conditions
*
Measured using pulse current
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
!Packaging specifications and h
FE
Package
Taping
Code
2SD1898
Type
T100
1000
h
FE
TL
2500
-
TP
5000
2000
-
Bulk
-
-
-
2SD1733
-
-
-
2SD1768S
-
-
-
-
2SD1863
2SD1381F
PQR
PQR
QR
R
-
-
-
-
TV2
2500
-
-
-
-
-
Basic ordering unit (pieces)
PQ
h
FE
values are classified as follows :
Item
h
FE
R
180~390
Q
120~270
P
82~180
!Electrical characteristic curves
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
1000
100
10
1
Ta=25C
V
CE
=5V
2
4
0
8
10
6
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
Fig.2 Grounded emitter output
characteristics
1.0
0
0.8
0.6
0.4
0.2
6mA
5mA
4mA
3mA
2mA
1mA
I
B
=0mA
Ta=25C
0
100
1000
100
0
10
1000
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(
mA)
Fig.3 DC current gain vs.
collector current
Ta=25C
V
CE
=3V
1V
0.01
0.1
1.0
2.0
0.2
0.02
0.05
0.5
100
0
10
1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
I
C
/I
B
=20/1
Ta=25C
10/1
1
2
5
10
20
50 100 200 500 1000
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT :
-
I
E
(mA)
Fig.5 Gain bandwidth product vs.
emitter current
500
200
100
50
20
10
5
2
Ta=25C
V
CE
=5V
0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER
INPUT
CAPACITANCE :
Cib

(
pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(
V)
EMITTER TO BASE VOLTAGE : V
EB
(
V)
Fig.6 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
100
1000
10
1
Ta=25C
f=1MHz
I
E
=0A
Ic=0A
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F
Transistors
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
0.1 0.2 0.5 1 2
5 10 20 50100
500
200
1000
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Ic Max (Pulse)
Ta=25C
Single
non-repetitive
pulse
Pw=10m
S
Pw=100mS
DC
Fig.7 Safe operating area
(2SD1863)
Ic Max (Pulse)
Ta=25C
Single
non-repetitive
pulse
Pw=10m
S
Pw=100mS
DC
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
C
(
A)
0.1 0.2 0.5 1
2
5 10 20 50100
500
200
1000
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
Fig.8 Safe operating area
(2SD1898)
0.1 0.2 0.5 1 2
5 10 20 50 100
500
200
1000
10
5
2
1
20m
10m
5m
2m
1m
50m
100m
200m
500m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.9 Safe operating area
(2SD1381F)
Pw=8ms
Ic Max (Pulse)
Ta=45C
Single
non-repetitive
pulse
DC