2SD1781K
Transistors
Rev.A
1/3
Medium Power Transistor (32V, 0.8A)
2SD1781K
Features
1) Very Low V
CE(sat)
.
V
CE(sat)
=
-
0.1V(Typ.)
I
C
/ I
B
= 500
A / 50mA
2) High current capacity in compact package.
3) Complements the 2SB1197K.
Structure
Epitaxial planar type
NPN silicon transistor
External dimensions (Unit : mm)
0~0.1
2.8
0.2
1.6
0.3~0.6
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : AF
All terminals have
same dimensions
Denotes h
FE
Absolute maximum ratings (Ta=25
C)
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
40
V
V
V
A (DC)
mW
C
C
32
5
0.8
A (Pulse)
1.5
I
C
I
CP
200
150
-
55 to
+
150
Symbol
Limits
Unit
Single pulse Pw
=
100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
2SD1781K
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
32
5
-
-
120
-
-
-
-
-
-
-
-
-
0.1
150
15
-
-
-
0.5
0.5
390
0.4
-
-
V
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
20V
V
EB
=
4V
V
CE
=
3V, I
C
=
100mA
I
C
/I
B
=
500mA/50mA
V
CE
=
5V, I
E
= -
50mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Packaging specifications and h
FE
Package
Code
T146
3000
Taping
Basic ordering
unit (pieces)
QR
h
FE
2SD1781K
Type
h
FE
values are classified as follows :
Item
Q
h
FE
120 to 270
R
180 to 390
Electrical characteristic curves
DC CURRENT GAIN : h
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collector
current
1
10
20
50
2
5
10
20
50 100 200
500 1000
FE
100
200
500
1000
V
CE
=
5V
Ta
=
100
C
25
C
-
55
C
C
(mA)
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics
0
400
0
2
4
6
8
10
300
200
100
I
B
=
0
A
Tc
=
25
C
100
A
200
A
300
A
400
A
500
A
600
A
700
A
800
A
800
A
900
A
1mA
1mA
COLLECTOR CURRENT : I
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
0.1
200
500
100
20
50
10
2
5
1
0.2
0.5
0.2
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Ta
=
25
C
V
CE
=
6V
2SD1781K
Transistors
Rev.A
3/3
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current ( )
1
2
5
10
20
50 100 200
500 1000
5
10
20
50
100
200
500
1000
Ta
=
25
C
I
C
/I
B
=
50
20
10
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( )
1
2
5
10
20
50 100 200
500 1000
5
10
20
50
100
200
500
1000
l
C
/l
B
=
10
25
C
-
55
C
Ta
=
100
C
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Gain bandwidth product vs.
emitter current
-
1
1000
200
500
20
50
100
10
-
2
-
5
-
10
-
20
-
50
-
100
-
200
Ta=25
C
V
CE
=
5V
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
0.1
100
20
50
10
5
0.2
0.5 1.0 2.0
5.0 10
20
50
Ta
=
25
C
f
=
1MHz
I
E
=
0A
EMITTER INPUT CAPACITANCE : Cib
(pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.8 Emitter input capacitance vs.
emitter-base voltage
200
0.1
10
100
20
50
10
5
0.2
0.5
1.0
2.0
5.0
Ta
=
25
C
f
=
1MHz
I
C
=
0A
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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