2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!
!
!
!Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.5V (Typ.)
(I
C
/I
B
= 2A / 0.2A)
2) Complements the 2SB1184 / 2SB1243.
!
!
!
!Structure
Epitaxial planar type
NPN silicon transistor
!
!
!
!External dimensions
(Units : mm)
(1) Base
(2) Collector
(3) Emitter
(1) Emitter
(2) Collector
(3) Base
ROHM : CPT3
EIAJ : SC-63
ROHM : ATV
1.0
6.8
0.2
2.5
0.2
1.05
0.45
0.1
2.54 2.54
0.5
0.1
0.9
4.4
0.2
14.5
0.5
(1)
(2)
(3)
0.65Max.
2SD1760
2SD1864
-
0.1
+0.2
-
0.1
+0.2
+0.3
-
0.1
2.30.2
2.30.2
0.650.1
0.9
0.75
1.00.2
0.550.1
9.50.5
5.5
1.50.3
2.5
1.5
2.3
0.50.1
6.50.2
5.1
C0.5
(3)
(2)
(1)
0.9
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
V
CBO
60
V
V
CEO
50
V
V
EBO
5
V
I
C
3
A (DC)
4.5
A (Pulse)
*
1
Tj
150
C
Tstg
-
55~+150
C
2SD1864
2SD1760
1
15
W (Tc =25
C)
*
2
P
C
*
1 Single pulse, P
W
= 100ms
*
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
W
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
2SD1760 / 2SD1864
Transistors
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
Cob
Min.
60
50
5
-
-
82
390
-
-
-
-
-
-
-
-
-
0.5
90
40
-
-
-
1
1
1
-
-
V
I
C
= 50
A
I
C
= 1mA
I
E
= 50
A
V
CB
= 40V
V
EB
= 4V
V
CE
= 3V, I
C
= 0.5A
V
CE
= 5V, I
E
=
-
500mA, f = 30MHz
I
C
/I
B
= 2A/0.2A
*
*
*
V
CB
= 10V, I
E
= 0A, f = 1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
*
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
!
!
!
!Packaging specifications and h
FE
Package
Taping
Code
2SD1760
Type
TL
2500
h
FE
TV2
2500
-
-
2SD1864
PQR
PQR
Basic ordering
unit (pieces)
h
FE
values are classified as follows:
Item
h
FE
R
180~390
Q
120~270
P
82~180
!
!
!
!Electrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
0
10
0.01
2
5
1
0.2
0.5
0.1
0.02
0.05
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V
CE
=
3V
25
C
-25
C
Ta = 100
C
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
)
0
1
2
3
4
5
0
0.5
1.0
1.5
2.0
2.5
3.0
15mA
20mA
25mA
30mA
35mA
40mA
50mA
10mA
5mA
I
B
= 0mA
45mA
Ta = 25
C
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded-emitter output
characteristics(
)
0
10
20
30
40
50
0
0.5
1.0
1.5
2.0
2.5
3.0
Ta = 25
C
50mA
45mA
40mA
35mA
30mA
25mA
15mA
10mA
P
C
= 15W
I
B
= 5mA
20mA
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current(
)
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
1000
500
200
100
50
20
10
5
2
1
Ta = 25
C
10
V
CE
= 5V
3V
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.5 DC current gain vs.
collector curren(
)
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
1000
500
200
100
50
20
10
5
2
1
V
CE
= 3V
Ta = 100
C
-25
C
25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter saturation
voltage vs. collector current
0.010.02 0.05 0.1 0.2
0.5
1
2
5
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Ta = 25
C
I
C
/I
B
= 50
20
10
2SD1760 / 2SD1864
Transistors
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
BASE
SATURATION
VOLTAGE :
V
BE (sat)
(V)
Fig.7 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation voltage
vs. collector current
0.01 0.02 0.05 0.1 0.2 0.5
1
2
5
10
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
l
C
/l
B
= 10
V
BE (sat)
V
CE (sat)
Ta = -25
C
100
C
25
C
25
C
Ta = 100
C
-25
C
EMITTER CURRENT :
-
I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
1
2
5
10 20
50 100 200
5001000
1000
500
200
50
20
100
10
2
5
1
Ta = 25
C
V
CE
= 5V
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.9 Collector output capacitance
vs. collector-base voltage
0.1 0.2
0.5
1
2
5
10
20
50 100
100
200
500
1000
10
20
50
2
5
1
Ta = 25
C
f = 1MHz
I
E
= 0A
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.10 Safe operating area
(2SD1760)
0.1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
0.2
0.5
1
2
5
10 20
50 100
Ta = 25
C
*
Single pulse
P
W
=
10ms*
P
W
=
100ms*
DC
V
CE
=5v
I
C
=0.2A
1
10
1Sec 10Sec 100Sec
100
1
0.1
10
100
TIME : T
(ms)
TRANSIENT THERMAL RESISTANCE : R
th
(
C/W)
Fig.11 Transient thermal resistance
(2SD1760)
0.2
0.5
1
2
5
10 20
50 100
5
2
1
0.1
0.2
0.5
0.02
0.05
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Ta=25
C
Single
nonrepetitive
pulse
Pw=10m
Sec
Pw=100mSec
DC
Fig.12 Safe operating area
(2SD1864)
1
10
100
1
10Sec 100Sec 1000Sec
10
1
100
0.1
TIME : T
(ms)
TRANSIENT THERMAL RESISTANCE : R
th
(
C/W)
Fig.13 Transient thermal resistance
(2SD1864)
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