2SD2195 / 2SD1980 / 2SD1867
Transistors
Rev.B
1/3
Power Transistor (100V, 2A)
2SD2195 / 2SD1980 / 2SD1867
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316.
Equivalent circuit
R
1
3.5k
R
2
300
B
C
E
C
B
E
: Base
: Collector
: Emitter
R
1
R
2
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 Single pulse Pw
=
100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
3 Printed circuit board, 1.7mm thick, collector plating 100mm
2
or larger.
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
6
2
2
1
1
10
150
-
55 to
+
150
Unit
V
V
V
A(DC)
3
A(Pulse)
W
W
W(Tc
=
25
C)
2SD2195
2SD1980
2SD1867
C
C
1
2
3
0.5
External dimensions (Unit : mm)
2SD2195
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
2SD1980
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
ROHM : MPT3
2SD1867
(2) Collector
(1) Emitter
ROHM : ATV
Taping specifications
(3) Base
0.45
1.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
1.5
0.4
1.6
0.5
3.0
0.4
0.4
1.5
1.5
(3)
(2)
(1)
4.5
0.5
4.0
2.5
1.0
6.5
2.3
(2)
(3)
0.65
0.9
(1)
0.75
2.3
0.9
5.1
1.5
5.5
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
2SD2195 / 2SD1980 / 2SD1867
Transistors
Rev.B
2/3
Packaging specifications and h
FE
Package
Code
Basic ordering unit (pieces)
Marking
Denotes h
FE
Type
h
FE
2SD2195
2SD1980
2SD1867
MPT3
CPT3
ATV
1k to 10k
1k to 10k
1k to 10k
DP
T100
1000
2500
2500
TL
TV2
-
-
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Output capacitance
Collector-emitter saturation voltag
DC current transfer ratio
Measured using pulse current.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CBO
BV
EBO
I
CBO
I
EBO
Cob
100
100
-
-
-
-
-
-
-
-
25
80
-
-
10
3
-
-
V
V
-
-
V
A
mA
pF
I
C
=
50
A
I
C
=
5mA
I
E
=
5mA
V
CB
=
100V
V
EB
=
5V
V
CE(sat)
V
BE(sat)
-
-
-
-
1.5
V
2.0
V
I
C
=
1A , I
B
=
1mA
I
C
/I
B
=
1A/1mA
h
FE
1000
-
10000
-
V
CE
=
2V , I
C
=
1A
V
CE
=
5V , I
E
=
-
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Emitter-base breakdown voltage
Base-Emitter saturation voltage
Transition frequency
6
f
T
MHz
Electrical characteristic curves
2.0
COLLECTOR CURRENT : I
C
(
A)
5
2
3
4
1
0
1.2
1.6
0.4
0.8
0
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
Ta=25
C
1mA
IB=0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
COLLECTOR CURRENT : I
C
(
A)
2.6
3.0
1.4
1.0
1.8
2.2
0.6
0.2
0.01
0.02
0.05
0.1
0.2
0.5
10
1
2
5
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.2 Grounded emitter propagation
characteristics
V
CE
=2V
Ta=100
C
25
C
-
25
C
DC CURRENT GAIN : h
FE
10
1
0.1
0.01
0.001
50
100
200
500
1000
2000
5000
10000
20
10
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC current gain vs. collector current
Ta=25
C
V
CE
=4V
2V
V
CE
=2V
Ta=100
C
25
C
-
25
C
DC CURRENT GAIN : h
FE
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
2
5
10
10
20
50
100
200
500
1000
2000
5000
10000
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs. collector current
100
20
10
1
0.1
0.2
0.5
2
5
50
0.0.1 0.0.2
0.0.5 0.1
0.2
0.5
1
2
5
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs.collector current
Ta=25
C
I
C
/I
B
=1000
500
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
100
20
10
1
0.1
0.2
0.5
2
5
50
0.0.1 0.0.2
0.0.5 0.1
0.2
0.5
1
2
5
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs.collector current
I
C
/I
B
=1000
Ta=
-
25
C
100
C
25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V
)
2SD2195 / 2SD1980 / 2SD1867
Transistors
Rev.B
3/3
1000
200
100
10
1
2
5
20
50
500
0.1
0.2
0.5
1
2
5
10
20
50 100
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.7 Collector output capacitance
vs. collector-base voltage
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Ta=25
C
f=1MHz
I
E
=0A
10
2
5
1
1
2
0.1 0.2
0.5
5 10 20
50 100 200 500 1000
COLLECTOR TO EMITTER VOLTTER
VOLTAGE :V
CE
(V)
Fig.8 Safe operating area (2SD2195)
COLLECTOR CURRENT : I
C
(A)
Ta=25
C
Single Nonrepetitive Pulse
I
C
Max
Pulse
Pw=10ms
Pw=1ms
Pw=100ms
DC
When mounted on a 14 8 0.8mm
glass epoxy board.
+ +
10m
20m
50m
100m
200m
500m
1m
2m
5m
3
2
1
0.1
0.05
0.2
0.5
1
2
5
10
20
50
100
V
CE
(V)
Fig.9 Safe operating area(2SD1867)
I
C
(A)
Ta=25
C
Single Nonrepetitive
Pulse
I
C
Max
Pulse
Pw=10ms
Pw=100ms
DC
I
C
Max
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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