(96-232-C107)
F
External dimensions (Units: mm)
232
Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
F
Features
1) High DC current gain.
h
FE
= 1200 (Typ.)
2) High emitter-base voltage.
V
EBO
= 12V (Min.)
3) Low V
CE(sat)
.
V
CE(sat)
= 0.18V (Typ.)
(I
C
/ I
B
= 500mA / 20mA)
F
Structure
Epitaxial planar type
NPN silicon transistor
233
Transistors
2SD2114K / 2SD2144S
F
Absolute maximum ratings (Ta = 25
_
C)
F
Electrical characteristics (Ta = 25
_
C)
F
Packaging specifications and h
FE
h
FE
values are classified as follows :
F
Electrical characteristic curves
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