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Электронный компонент: 2SD2264

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2SD2264
Transistors
Rev.A
1/3
Low Frequency Transistor (20V, 3A)
2SD2264

Features
1) Low V
CE(sat)
.
V
CE(sat)
=
0.2V(Typ.)
I
C
/ I
B
= 2A / 0.1A
2) Excellent current gain characteristics.


Structure
Epitaxial planar type
NPN silicon transistor





External dimensions (Unit : mm)
2SD2264
(1) Emitter
(2) Collector
(3) Base
ROHM :
ATV
1.0
6.8
0.2
2.5
0.2
1.05
0.45
0.1
2.54 2.54
0.5
0.1
0.9
4.4
0.2
14.5
0.5
(1)
(2)
(3)
0.65Max.
Denotes h
FE


Absolute maximum ratings (Ta=25
C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
40
V
V
V
A (DC)
W
C
C
20
6
3
A (Pulse)
5
1
1
2
150
-
55 to
+
150
Symbol
Limits
Unit
1 Single pulse Pw
=
10ms
2 Printed circuit board, 1.7mm thick, collector copper plating 100mm
2
or larger.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature










2SD2264
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
40
20
6
-
-
180
-
-
-
-
-
-
-
-
-
0.2
290
25
-
-
-
0.1
0.1
0.5
-
-
V
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
30V
V
EB
=
5V
V
CE
=
2V, I
C
=
0.1A
390
I
C
/I
B
=
2A/0.1A
V
CE
=
2V, I
E
= -
0.5A, f
=
100MHz
V
CE
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance

Packaging specifications and h
FE
Package
Code
Taping
Basic ordering
unit (pieces)
h
FE
TV2
2500
R
2SD2264
Type


h
FE
values are classified as follows :
Item
h
FE
R
180 to 390



Electrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
1m
2m
5m
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
=
2V
25
C
-
40
C
Ta
=
100
C
0
0.4
0.8
1.2
1.6
2
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics ( )
8mA
6mA
4mA
2mA
20mA
18mA
16mA
14mA
12mA
10mA
Ta
=
25
C
I
B
=
0A
0
1
2
3
4
5
0
1
2
3
4
5
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics ( )
Ta
=
25
C
I
B
=
0A
35mA
30mA
25mA
20mA
15mA
10mA
5mA
40mA
45mA
50mA



2SD2264
Transistors
Rev.A
3/3

2
2m
5m
10m
20m
50m
0.1
0.2
0.5
2m 5m10m20m50m0.1 0.2 0.5 1 2
5 10
1m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
C
(A)
Fig.5 Collector-emitter
saturation voltage vs.
collector current ( )
Ta
=
100
C
25
C
-
40
C
I
C
/I
B
=
10
1
CE(sat)
(V)
1m
5
10
20
50
100
200
500
1000
2000
5000
2m 5m 0.010.02 0.05 0.10.2 0.5 1
2
5 10
V
CE
=
2V
25
C
-
40
C
Ta
=
100
C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Fig.4 DC current gain vs.
collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.6 Collector-emitter
saturation voltage vs.
collector current ( )
1m
2m
5m
0.01
0.01
1m 2m 5m
0.02 0.05
0.02
0.05
0.5
0.2
0.1
0.1
1
0.2
10
2
5
0.5
1
l
C
/l
B
=
20
25
C
-
40
C
Ta
=
100
C

2
(V)
2m
5m
10m
20m
50m
0.1
0.2
0.5
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
COLLECTOR CURRENT : I
C
(A)
Fig.7 Collector-emitter
saturation voltage vs.
collector current ( )
2m 5m10m20m50m
0.2 0.5 1 2
5 10
1m
0.1
I
C
/I
B
=
20
Ta
=
100
C
25
C
-
40
C
-
5
-
2
-
1
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(mA)
Fig.8 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
20
10
5
2
1
Ta
=
25
C
V
CE
=
2V
10
20
50
100
200
500
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR OUTPUT CAPACITANCE : C
ob
EMITTER INPUT CAPACITANCE : C
ib
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
(pF)
(pF)
Ta
=
25
C
f
=
1MHz
C
ob
C
ob
I
E
=
0A
I
C
=
0A
Appendix
Appendix1-Rev1.1


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Notes
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The contents described herein are subject to change without notice. The specifications for the
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