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Электронный компонент: BAV70

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BAV70 / BAW56 / BAV99
Diodes
1/3
Switching diode
BAV70 / BAW56 / BAV99
This product is available only outside of Japan.

Application
Ultra high speed switching

Features
1) Small surface mounting type. (SSD3)
2) High speed. (t
rr
=1.5ns Typ.)
3) Four types of circuit configurations are available.

Construction
Silicon epitaxial planar

External dimensions (Unit : mm)
0
~
0.1
0.2Min.
2.4
0.2
1.3
0.95
0.45
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.69
+
0.1
-
0.05
Each lead has same dimensions
(1)
(3)
(2)
Marking (Type No.)
Product name
Type No.
RA4
RA7
RA1
BAV70
BAW56
BAV99
(Ex.) BAV70
RA4

Equivalent circuits
BAV70
BAW56
BAV99







BAV70 / BAW56 / BAV99
Diodes
2/3
Absolute maximum ratings (Ta=25
C)
P / N Type
Peak
reverse
voltage
V
RM
(V)
DC
reverse
voltage
V
R
(V)
Peak
forward
current
I
FM
(mA)
Mean
rectifying
current
I
F
(mA)
Surge
current
(1
s)
I
surge
(A)
Power
dissipation
(TOTAL)
Pd (mW)
Junction
temperature
Tj (
C)
Storage
temperature
Tstg (
C)
Type
BAV70
BAW56
BAV99
75
85
85
70
70
75
450
450
450
215
215
215
4
4
4
300
225
300
150
150
150
-
55 to
+
150
-
55 to
+
150
-
55 to
+
150
N
P
N

Electrical characteristics (Ta=25
C)
Type
BAV70
BAW56
BAV99
1.25
1.25
1.25
150
150
150
2.5
1.0
1.0
70
75
75
1.5
2.0
1.5
0
0
0
1
1
1
4
4
4
10
10
10
10
10
10
V
F
(V)
Max.
Cond.
I
F
(mA)
I
R
(
A)
Max.
Cond.
V
R
(V)
C
T
(pF)
Max.
Cond.
V
R
(V)
f (MHz)
t
rr
(ns)
Max.
Cond.
V
R
(V)
I
F
(mA)
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time

Electrical characteristic curves (Ta=25
C)
0
25
50
75
100
125
0
25
50
75
100
125
150
AMBIENT TEMPERATURE : T
a (
C)
POWER DISSIPATION : Pd / Pd
Max.
(%)
Fig.1 Power attenuation curve
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
50
20
10
5
2
1
0.5
0.2
0.1
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.2 Forward characteristics
(P Type)
Ta
=
85
C
50
C
25
C
0
C
-
30
C
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(nA)
0.01
100
1000
10
0.1
1
10
20
30
40
50
0
Fig.3 Reverse characteristics
(P Type)
Ta
=
100
C
75
C
50
C
25
C
0
C
-
25
C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
50
20
10
5
2
1
0.5
0.2
0.1
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig.4 Forward characteristics
(N Type)
Ta
=
85
C
50
C
25
C
0
C
-
30
C
REVERSE VOLTAGE : V
R
(V)
REVERSE CURRENT : I
R
(nA)
0.01
100
1000
10
0.1
1
10
20
30
40
80
70
60
50
0
Fig.5 Reverse characteristics
(N Type)
Ta
=
100
C
75
C
50
C
25
C
-
25
C
0
C
0
2
4
6
8
10 12
16
14
18
20
4
2
0
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
f
=
1MHz
Fig.6 Capacitance between
terminals characteristics
P Type
N Type
BAV70 / BAW56 / BAV99
Diodes
3/3
0
1
2
3
4
5
6
8
7
9
10
8
4
5
6
7
9
10
1
2
3
0
FORWARD CURRENT : I
F
(mA)
REVERSE RECOVERY TIME : t
rr (
ns)
V
R
=6V
Fig.7 Reverse recovery time
P Type
N Type
5
50
100ns
0.1I
R
0
INPUT
OUTPUT
SAMPLING
OSCILLOSCOPE
PULSE GENERATOR
OUTPUT 50
0.01
F
D.U.T
t
rr
I
R
Fig.8 Reverse recovery time (t
rr
) measurement circuit
Appendix
Appendix1-Rev1.0


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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whatsoever nature in the event of any such infringement, or arising from or connected with or related
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.