DTA115GUA / DTA115GKA
Transistors
Rev.A
1/2
Digital transistors (built-in resistor)
DTA115GUA / DTA115GKA
Features
1) The built-in bias resistors consist of thin-film resistors
with complete isolation to allow positive biasing of the
input, and parasitic effects are almost completely
eliminated.
2) Only the on / off conditions need to be set
for operation, making device design easy.
3) Higher mounting densities can be achieved.
Equivalent circuit
C
B
E
R
E : Emitter
C : Collector
B : Base
External dimensions (Unit : mm)
DTA115GUA
ROHM : UMT3
EIAJ : SC-70
DTA115GKA
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
0.8
0.15
0
~
0.1
0.3Min.
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
Each lead has same dimensions
Each lead has same dimensions
Absolute maximum ratings (Ta=25
C)
Parameter
Limits
-
50
-
50
-
5
-
100
200
150
-
55 to
+
150
Unit
V
V
V
mA
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Package, marking, and packaging specifications
DTA115GUA
UMT3
K19
T106
3000
DTA115GKA
SMT3
K19
T146
3000
Type
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTA115GUA / DTA115GKA
Transistors
Rev.A
2/2
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
-
50
-
50
-
5
-
-
30
-
82
-
70
-
-
-
-
-
-
-
250
100
-
-
-
-
0.5
-
58
-
0.3
-
-
130
V
V
V
A
A
V
-
MHz
k
I
C
= -
50
A
I
C
= -
1mA
I
E
= -
72
A
V
CB
= -
50V
V
EB
= -
4V
I
C
= -
5mA, I
B
= -
0.25mA
I
C
= -
5mA, V
CE
= -
5V
V
CE
= -
10V, I
E
=
5mA, f
=
100MHz
-
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Emitter-base resistance
Transition frequency of the device.
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
Electrical characteristics curves
1k
100
50
20
500
200
10
5
2
1
10
20
50
100
200
500
1m 2m
5m 10m
V
CE
=5V
Fig.1 DC current gain
vs. Collector current
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
Ta
=
100
C
Ta
=
25
C
Ta
= -
40
C
1
100m
50m
20m
500m
200m
10m
5m
2m
1m
10
20
50
100
200
500
1m 2m
5m 10m
I
C
/I
B
=20/1
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
COLLECTOR SATURATION VOLTAGE : V
CE
(
sat
)
(V)
COLLECTOR CURRENT : I
C
(A)
Ta
=
100
C
Ta
=
25
C
Ta
= -
40
C
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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