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Электронный компонент: DTA115TE

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DTA115TH / DTA115TE / DTA115TUA /
Transistors
DTA115TKA / DTA115TSA
Digital transistors (built-in resistor)
DTA115TH / DTA115TE / DTA115TUA /
DTA115TKA / DTA115TSA
!
!
!
!Features !
!
!
!External dimensions
(Units : mm)
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
!
!
!
!Circuit schematic
C
B
E
R
1
E : Emitter
C : Collector
B : Base
ROHM : EMT3
DTA115TE
EIAJ : SC-75A
(3)Collector
(1)Emitter
(2)Base
0.7
1.6
1.0
0.5
0.5
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
0.3
0.8
(2)
(3)
0.2
(1)
ROHM : UMT3
EIAJ : SC-70
DTA115TUA
(3)Collector
(1)Emitter
(2)Base
1.25
2.1
0.3
0.15
0~0.1
0.1~0.4
( 3
)
0.9
0.7
0.2
0.65
( 2
)
2.0
1.3
( 1
)
0.65
ROHM : SMT3
EIAJ : SC-59
DTA115TKA
(2)Base
(3)Collector
(1)Emitter
0.8
0.15
0
~
0.1
0.3
~0.6
1.1
( 2
)
( 1
)
2.8
1.6
0.4
( 3
)
2.9
1.9
0.95
0.95
DTA115TSA
ROHM : SPT
EIAJ : SC-72
(3)Base
(1)Emitter
(2)Collector
0.45
2.5
(1)(2)(3)
( 15Min.
)
5
3
3Min.
0.45
0.5
4
2
Each lead has same dimensions
Each lead has same dimensions
Taping specifications
DTA115TH
1.6
ROHM : EMT3H
EIAJ : SC-89
(1)Emitter
(3)Collector
(2)Base
0.12
0
~
0.1
0.27
(3)
0.7
1.0
0.5
0.5
1.6
0.85
(1)
(2)
DTA115TH / DTA115TE / DTA115TUA /
Transistors
DTA115TKA / DTA115TSA
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
50
-
50
-
5
-
100
150
200
300
DTA115TH / DTA115TE
DTA115TUA / DTA115TKA
DTA115TSA
150
-
55 ~
+
150
Unit
V
V
V
mA
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
!
!
!
!Package, marking, and packaging specifications
Part No.
DTA115TE
DTA115TH
EMT3
EMT3H
99
99
TL
T2L
3000
8000
DTA115TUA
UMT3
99
T106
3000
DTA115TKA
SMT3
99
T146
3000
DTA115TSA
SPT
TP
5000
Package
Basic ordering unit (pieces)
Marking
Packaging code
-
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
-
50
-
50
-
5
-
-
-
-
100
70
-
-
-
-
-
-
250
250
100
-
-
-
-
0.5
-
0.5
-
0.3
600
-
130
V
V
V
A
A
V
-
MH
Z
k
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
50V
V
EB
=-
4V
I
C
/I
B
=-
1mA/
-
0.1mA
I
C
=-
1mA , V
CE
=-
5V
V
CE
=-
10V , I
E
=
5mA , f
=
100MH
Z
Transition frequency of the device.
-
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Input resistance
Transition frequency