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Электронный компонент: DTA143EEA

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2SD2153
Transistors
Rev.A
1/2
High gain amplifier transistor (25V, 2A)
2SD2153

Features
1) Low saturation voltage,
typically V
CE(sat)
= 0.12V at I
C
= I
B
= 1A / 20mA
2) Excellent DC current gain characteristics.





External dimensions (Unit : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
25
6
2
2
0.5
150
-
55 to
+
150
Unit
V
V
V
A(DC)
3
A(Pulse)
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Single pulse, Pw
=1
0ms
1
1
2
2
Mounted on a 40 40
t
0.7mm Ceramic substrate
+
+

Packaging specifications and h
FE
Type
2SD2153
MPT3
UVW
T100
DN
1000
Package
h
FE
Code
Basic ordering unit (pieces)
Marking
Denotes h
FE

Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
30
25
6
-
-
560
-
-
-
-
-
-
-
-
110
22
-
-
-
0.5
0.5
2700
-
-
V
V
V
A
A
-
MHz
pF
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
20V
V
EB
=
5V
-
0.12
0.5
V
I
C
/I
B
=
1A/20mA
V
CE
/I
C
=
6V/0.5A
V
CE
=
10V
,
I
E
= -
10mA ,
f
=
100MHz
V
CB
=
10V
,
I
E
=
0A ,
f
=
1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.




2SD2153
Transistors
Rev.A
2/2
Electrical characteristics curves
0
0
Fig.1 Ground emitter output
characteristics
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
1
1
2
2
10mA
7mA
6mA
5mA
9mA
8mA
3mA
2mA
1
B
=1mA
4mA
Ta=100 C
25 C
-
25 C
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
1
1.5
500m
0
Fig.2 Ground emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
1m
2m
5m
1
2
5
10
10m
20m
50m
100m
200m
500m
Fig.3 DC current gain
V
CE
=6V
Ta=100 C
25 C
-
40 C
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
1m
50
100
200
500
1k
2k
5k
10k
10m
100m
1
10

I
C
/I
B
=50
40
30
10
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)
(V)
1m
1m
2m
2m
5m
5m
10m
10m
20m
20m
50m
50m
100m
100m
200m
200m
500m
500m
1
1
2
5
COLLECTOR CURRENT : I
C
(
A
)
Fig.4 Collector-emitter saturation voltage
vs. collector current
I
C
/I
B
=10
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat)
(V)
1m
2m
2m
5m
5m
10m
10m
20m
20m
50m
50m
100m
100m
200m
200m
500m
500m
1
1
2
5
1m
COLLECTOR CURRENT : I
C
(
A
)
Fig.5 Collector-emitter saturation voltage
vs. collector current
Ta=100 C
25 C
-
25 C
TRANSITION FREQUENCY : f
T
(MHz)
2
5
10 20
50 100 200 500 1000
1
2
5
10
20
50
100
200
500
10000
1
EMITTER CURRENT : I
E
(m
A
)
Fig.6 Gain bandwith product
vs. emitter current
This data are made from repesentative value of specific lot.
The data do not indicate the worst value or guaranteed value.
And we can not guarantee the value based on the data.
V
CE
=6V
Ta=25 C

COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
10
0.2
20
0.5
50
1
100
2
200
5
500
10
1000
20
50 100
0.1
COLLECTOR TO BASE VOLTAGE : V
CB
(
V
)
Fig.7 Collector output capacitance
vs. collector-base voltage
Ta=25
C
f=1MHz
Ic=0A
EMITTER INPUT CAPACITANCE : Cib(pF)
10
0.2
20
0.5
50
1
100
2
200
5
500
10
1000
0.1
EMITTER TO BASE VOLTAGE : V
EB
(
V
)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Ta=25
C
f=1MHz
Ic=0A
PW=100ms
COLLECTOR CURRENT : Ic (A)
1
1
10
10
100
0.1
0.001
0.01
0.1
COLLECTOR TO EMITTER VOLTAGE : V
CE
(
V
)
Fig.9 Safe operating area
Ta=25
C
Single non repetitive pulse
Ic max (Pulse)
PW=10ms
DC
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
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