DTA143TM / DTA143TE / DTA143TUA
Transistors
DTA143TKA / DTA143TSA
Digital transistors (built-in resistor)
DTA143TM / DTA143TE / DTA143TUA
DTA143TKA / DTA143TSA
!
!
!
!
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making device design easy.
!
!
!
!
Structure
PNP digital transistor
(Built in resistor type)
!
!
!
!
Equivalent circuit
R
1
B : Base
C : Collector
E : Emitter
B
E
C
!
!
!
!
External dimensions (Units : mm)
Abbreviated symbol : 93
0.2
0.2
0.5
0.5
1.0
0.1
1.6
0.2
0.3
0.8
0.1
1.6
0.2
0.55
0.1
0.7
0.1
0.15
0.05
0.1Min.
(3)
(2)
(1)
0~0.1
-
0.05
+
0.1
+
0.1
-
0.05
+
0.1
-
0.05
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
DTA143TE
Abbreviated symbol : 93
ROHM : VMT3
DTA143TM
(1) Base
(2) Emitter
(3) Collector
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
DTA143TSA
Abbreviated symbol : 93
0~0.1
2.8
0.2
1.6
0.3Min.
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
DTA143TKA
All terminals have same dimensions
Abbreviated symbol : 93
0~0.1
(2)
(1)
(3)
0.1Min.
2.1
0.1
1.25
0.1
0.9
0.1
0.2
0.7
0.1
0.15
0.05
0.3
2.0
0.2
1.3
0.1
0.65 0.65
+
0.1
-
0
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
DTA143TUA
All terminals have same dimensions
DTA143TM / DTA143TE / DTA143TUA
Transistors
DTA143TKA / DTA143TSA
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
-
50
-
50
-
5
-
100
150
200
300
150
-
55~
+
150
E
M
UA
KA
SA
V
V
CEO
V
EBO
V
V
mA
mW
C
C
I
C
P
C
Tj
Tstg
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits(DTA143T )
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
Min.
-
50
-
50
-
5
-
-
100
-
3.29
-
-
-
-
-
-
250
-
4.7
250
-
-
-
-
0.5
-
0.5
600
-
0.3
6.11
-
-
V
I
C
=-
50
A
I
C
=-
1mA
I
E
=-
50
A
V
CB
=-
50V
V
EB
=-
4V
I
C
=-
1mA, V
CE
=-
5V
I
C
/I
B
=-
5mA/
-
0.25mA
V
CE
=-
10V, I
E
=
5mA, f
=
100MHz
V
V
A
A
-
V
k
MHz
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Transition frequency of the device
!
!
!
!
Packaging specifications
TL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UMT3
EMT3
SMT3
SPT
DTA143TE
DTA143TM
Type
DTA143TUA
3000
T2L
VMT3
8000
T106
3000
T146
3000
TP
5000
DTA143TKA
DTA143TSA
Package
Packaging type
Taping
Taping
Taping
Taping
Taping
Code
Basic ordering
unit (pieces)
DTA143TM / DTA143TE / DTA143TUA
Transistors
DTA143TKA / DTA143TSA
!
!
!
!
Electrical characteristic curves
V
CE
=-
5V
-
100
-
1m
-
10m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
-
100m
1k
500
200
100
50
20
10
5
2
1
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
-
40
C
25
C
Ta
=
100
C
Fig.1 DC current gain vs. collector
current
l
C
/l
B
=
20
-
500m
-
200m
-
100m
-
50m
-
20m
-
10m
-
5m
-
2m
-
1m
-
1
-
100
-
1m
-
10m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
-
100m
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Ta
=
100
C
25
C
-
40
C
Fig.2 Collector-emitter saturation
voltage vs. collector current
PDF 
ZIP