DTC114TM / DTC114TE / DTC114TUA
Transistors
DTC114TKA / DTC114TSA
1/3
Digital transistors (built-in resistor)
DTC114TM / DTC114TE / DTC114TUA /
DTC114TKA / DTC114TSA
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Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
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Structure
NPN digital transistor
(With single built in resistor)
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Equivalent circuit
R
1
B : Base
C : Collector
E : Emitter
B
E
C
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External dimensions (Units : mm)
(1) Base
(2) Emitter
(3) Collector
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
ROHM : VMT3
DTC114TM
Abbreviated symbol : 04
Abbreviated symbol : 04
0.2
0.2
0.5
0.5
1.0
0.1
1.6
0.2
0.3
0.8
0.1
1.6
0.2
0.55
0.1
0.7
0.1
0.15
0.05
0.1Min.
(3)
(2)
(1)
0~0.1
-
0.05
+
0.1
+
0.1
-
0.05
+
0.1
-
0.05
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
DTC114TE
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
DTC114TSA
Abbreviated symbol : 04
0~0.1
2.8
0.2
1.6
0.3Min.
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
DTC114TKA
All terminals have same dimensions
Abbreviated symbol : 04
0~0.1
(2)
(1)
(3)
0.1Min.
2.1
0.1
1.25
0.1
0.9
0.1
0.2
0.7
0.1
0.15
0.05
0.3
2.0
0.2
1.3
0.1
0.65 0.65
+
0.1
-
0
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
DTC114TUA
All terminals have same dimensions
DTC114TM / DTC114TE / DTC114TUA
Transistors
DTC114TKA / DTC114TSA
2/3
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
50
50
5
100
150
200
300
150
-
55~
+
150
E
M
UA
KA
SA
V
V
CEO
V
EBO
V
V
mA
mW
C
C
I
C
P
C
Tj
Tstg
Unit
Limits(DTA114T )
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
Min.
50
50
5
-
-
100
-
7
-
-
-
-
-
-
300
-
10
250
-
V
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
50V
V
EB
=
4V
V
CE
=
5V, I
C
=
1mA
I
C
/I
B
=
10mA/1mA
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
V
V
A
A
-
V
k
MHz
Typ.
-
-
-
0.5
0.5
600
0.3
13
-
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Transition frequency of the device
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Packaging specifications
DTC114TE
DTC114TM
Type
DTC114TUA
DTC114TKA
DTC114TSA
Package
Package type
TL
EMT3
3000
-
-
-
-
Taping
T2L
-
-
-
-
VMT3
8000
Taping
UMT3
T106
3000
-
-
-
-
Taping
SMT3
T146
3000
-
-
-
-
Taping
SPT
TP
5000
-
-
-
-
Taping
Code
Basic ordering
unit (pieces)
DTC114TM / DTC114TE / DTC114TUA
Transistors
DTC114TKA / DTC114TSA
3/3
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Electrical characteristic curves
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
100
200
500
1m
2m
5m 10m 20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
V
CE
=
5V
Ta
=
100
C
25
C
-
40
C
Fig.1 DC current gain vs. collector
current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
100
200
500
1m
2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
C
/l
B
=
10
Ta
=
100
C
25
C
-
40
C
Fig.2 Collector-emitter saturation
voltage vs. collector current
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