DTC143TM / DTC143TE / DTC143TUA
Transistors
DTC143TKA / DTC143TSA
Digital transistors (built-in resistor)
DTC143TM / DTC143TE / DTC143TUA /
DTC143TKA / DTC143TSA
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Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making device design easy.
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Structure
PNP digital transistor
(Built-in resistor type)
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Equivalent circuit
R
1
B : Base
C : Collector
E : Emitter
B
E
C
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External dimensions (Units : mm)
Abbreviated symbol : 03
0.2
0.2
0.5
0.5
1.0
0.1
1.6
0.2
0.3
0.8
0.1
1.6
0.2
0.55
0.1
0.7
0.1
0.15
0.05
0.1Min.
(3)
(2)
(1)
0~0.1
-
0.05
+
0.1
+
0.1
-
0.05
+
0.1
-
0.05
(1) Emitter
(2) Base
(3) Collector
ROHM : EMT3
DTC143TE
Abbreviated symbol : 03
ROHM : VMT3
DTC143TM
(1) Base
(2) Emitter
(3) Collector
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
DTC143TSA
Abbreviated symbol : 03
0~0.1
2.8
0.2
1.6
0.3Min.
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
DTC143TKA
All terminals have same dimensions
Abbreviated symbol : 03
0~0.1
(2)
(1)
(3)
0.1Min.
2.1
0.1
1.25
0.1
0.9
0.1
0.2
0.7
0.1
0.15
0.05
0.3
2.0
0.2
1.3
0.1
0.65 0.65
+
0.1
-
0
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
DTC143TUA
All terminals have same dimensions
DTC143TM / DTC143TE / DTC143TUA
Transistors
DTC143TKA / DTC143TSA
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
50
50
5
100
150
200
300
150
-
55~
+
150
E
M
UA
KA
SA
V
V
CEO
V
EBO
V
V
mA
mW
C
C
I
C
P
C
Tj
Tstg
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Limits(DTC143T )
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
f
T
Min.
50
50
5
-
-
100
-
3.29
-
-
-
-
-
-
250
-
4.7
250
-
-
-
0.5
0.5
600
0.3
6.11
-
-
V
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
50V
V
EB
=
4V
I
C
=
1mA, V
CE
=
5V
I
C
/I
B
=
5mA/0.25mA
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
V
V
A
A
-
V
k
MHz
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Transition frequency of the device
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Packaging specifications
TL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UMT3
EMT3
SMT3
SPT
DTC143TE
DTC143TM
Type
DTC143TUA
3000
T2L
VMT3
8000
T106
3000
T146
3000
TP
5000
DTC143TKA
DTC143TSA
Package
Packaging type
Taping
Taping
Taping
Taping
Taping
Code
Basic ordering
unit (pieces)
DTC143TM / DTC143TE / DTC143TUA
Transistors
DTC143TKA / DTC143TSA
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Electrical characteristic curves
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
V
CE
=
5V
100
200
500
1m
2m
5m
10m 20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
Ta
=
100
C
25
C
-
40
C
Fig.1 DC current gain vs.
collector current
100
200
500
1m
2m
5m
10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Ta
=
100
C
25
C
-
40
C
l
C
/l
B
=
20
Fig.2 Collector-emitter saturation
voltage vs. collector current
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