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Электронный компонент: DTD143ES

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DTD143EK / DTD143EC / DTD143ES
Transistors
Rev.A
1/3
Digital transistors (built-in resistors)
DTD143EK / DTD143EC / DTD143ES

Features
1) Built-in bias resistors enable the configuration
of an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for
operation, making device design easy.

Structure
NPN digital transistor
(Built-in resistor type)

Equivalent circuit
R
1
R
2
IN
GND
OUT
IN
GND
OUT
External dimensions (Unit : mm)
3
0.2
(15Min.)
4
0.2
2
0.2
0.45
0.5
0.45
5
(1) (2) (3)
-
0.05
+
0.15
+
0.15
-
0.05
2.5
+
0.4
-
0.1
3Min.
(1) GND
(2) OUT
(3) IN
ROHM : SPT
EIAJ : SC-72
DTD143ES
0 to 0.1
0.2Min.
2.4
0.2
1.
3
0.95
0.45
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) GND
(2) IN
(3) OUT
ROHM : SST3
DTD143EC
All terminals have same dimensions
Abbreviated symbol : R23
0 to 0.1
2.8
0.2
1.6
0.3 to 0.6
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) GND
(2) IN
(3) OUT
ROHM : SMT3
EIAJ : SC-59
DTD143EK
All terminals have same dimensions
Abbreviated symbol : F23


Absolute maximum ratings (Ta=25
C)
Limits (DTD143E )
Parameter
Symbol
V
CC
50
-
10 to +30
500
200
300
150
-
55 to +150
V
V
IN
V
mA
mW
C
C
I
C
Pd
Tj
Tstg
Unit
K
C
S
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature



DTD143EK / DTD143EC / DTD143ES
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
R
1
G
I
R
2
/ R
1
f
T
Min.
-
3
-
-
-
3.29
47
0.8
-
-
-
0.1
-
-
4.7
-
1
200
0.5
-
0.3
1.8
0.5
6.11
-
1.2
-
V
V
CC
=5V, I
O
=100
A
V
O
=0.3V, I
O
=20mA
I
O
/ I
I
=50mA / 2.5mA
V
I
=5V
V
CC
=50V, V
I
=0V
V
O
=5V, I
O
=50mA
V
CE
=10V, I
E
=
-
50mA, f=100MHz
V
mA
A
k
-
-
-
-
MHz
Typ.
Max.
Unit
Conditions
Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency

Packaging specifications
Taping
Taping
Taping
SMT3
SST3
DTD143EK
Type
DTD143EC
T146
3000
-
-
-
SPT
TP
5000
T116
3000
-
-
DTD143ES
-
Package
Packaging type
Code
Basic ordering unit (pieces)

Electrical characteristic curves
V
O
=0.3V
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
500
1m
2m
5m 10m 20m
50m 100m 200m 500m
2
1
500m
200m
100m
100
50
20
10
5
25C
100C
Ta=
-
40C
Fig.1 Input voltage vs. output current
(ON characteristics)
V
CC
=5V
INPUT VOLTAGE : V
I (off)
(V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : Io
(A)
0.5
1.0
1.5
2.0
2.5
3.0
0
10m
5m
2m
1m
500
200
100
50
20
10
5
1
2
Ta=100C
25C
-
40C
1m
2m
5m 10m
100m
50m
20m
200m 500m
500
100
200
500
1k
20
50
10
5
2
1
V
O
=5V
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
Fig.3 DC current gain vs. output current
Ta=100C
25C
-
40C
DTD143EK / DTD143EC / DTD143ES
Transistors
Rev.A
3/3
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O (on)
(V)
Fig.4 Output voltage vs. output current
l
O
/ l
I
=20
500
1m
2m
5m 10m 20m
50m
500m
100m 200m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
25C
-
40C
Ta=100C
Appendix
Appendix1-Rev1.0


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appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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