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Электронный компонент: EMB9

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EMB9 / UMB9N / IMB9A
Transistors
General purpose
(dual digital transistors)
EMB9 / UMB9N / IMB9A
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!
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Features
1) Two DTA144Ys in a EMT or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
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Structure
Epitaxial planar type
PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both DTr
1
and
DTr
2
.
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!
!
!
Equivalent circuit
EMB9 / UMB9N
IMB9A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
2
R
1
R
2
=47k
R
1
=10k
R
2
=47k
R
1
=10k
!
!
!
!
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
Limits
Unit
V
CC
-
50
V
-
40
V
V
IN
6
I
O
-
70
mA
I
C (Max.)
-
100
Tj
150
C
Tstg
-
55
+
150
C
Pd
EMB9, UMB9N
150 (TOTAL)
mW
IMB9A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
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!
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External dimensions (Units : mm)
ROHM : EMT6
EMB9
ROHM : UMT6
EIAJ : SC-88
UMB9N
Abbreviated symbol : B9
Abbreviated symbol : B9
Abbreviated symbol : B9
ROHM : SMT6
EIAJ : SC-74
IMB9A
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
EMB9 / UMB9N / IMB9A
Transistors
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Electrical characteristics (Ta = 25
C)
Parameter
Symbol
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
R
1
G
I
R
2
/ R
1
Min.
-
-
1.4
-
-
-
7
68
3.7
-
-
-
0.1
-
-
10
-
4.7
-
0.3
-
-
0.3
-
0.88
-
0.5
13
-
5.7
V
V
CC
=
-
5V, I
O
=
-
100
A
V
O
=
-
0.3V, I
O
=
-
1mA
I
O
/I
I
=
-
5mA/
-
0.25mA
V
I
=
-
5V
V
CC
=
-
50V, V
I
=0V
-
V
O
=
-
5V, I
O
=
-
5mA
V
mA
A
k
-
-
-
Typ.
Max.
Unit
Conditions
-
f
T
250
-
V
CE
=
-
10mA, I
E
=5mA, f=100MHz
MHz
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
Transition frequency of the device
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!
!
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Packaging specifications
Package
Code
TR
T148
3000
3000
Taping
Basic ordering
unit (pieces)
UMB9N
T2R
8000
EMB9
IMB9A
Type
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!
!
!
Electrical characteristic curves
V
O
=
-
0.3V
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
-
100
-
50
-
20
-
10
-
5
-
2
-
1
-
500m
-
200m
-
100m
-
100
-
1m
-
10m
-
100m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
25C
100C
Ta=
-
40C
V
CC
=
-
5V
Ta=100C
25C
-
40C
0
-
3
-
10m
-
1
-
2m
-
5m
-
1m
-
200
-
500
-
100
-
20
-
50
-
10
-
2
-
5
-
0.5
-
1
-
1.5
-
2
-
2.5
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
Fig.2 Output current vs. input voltage
(OFF characteristics)
V
O
=
-
5V
Ta=100C
25C
-
40C
-
100
-
1m
-
10m
-
100m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
DC CURRENT GAIN : G
I
OUTPUT CURRENT : I
O
(A)
1k
500
200
100
50
20
10
5
2
1
Fig.3 DC current gain vs. output
current
l
O
/l
I
=20
-
500m
-
1000m
-
200m
-
100m
-
10m
-
50m
-
5m
-
20m
-
2m
-
1m
Ta=100C
25C
-
40C
-
100
-
1m
-
10m
-
100m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O (on)
(V)
Fig.4 Output voltage vs. output
current