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Электронный компонент: EMD4

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EMD4 / UMD4N
Transistors
Rev.B
1/4
General purpose
(dual digital transistors)
EMD4 / UMD4N

Features
1) Both the DTA114Y chip and DTC144E chip in
an EMT6 or UMT6 package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.

Structure
A PNP and NPN digital transistor
(each with a single built in resistor)


The following characteristics apply to both the DTr
1
and
DTr
2
, however, the "
-
" sign on DTr
2
values for the PNP
type have been omitted.

Equivalent circuit
EMD4 / UMD4N
DTr
2
DTr
1
(3)
(2)
(1)
(4)
(5)
(6)
R
1
R
1
DTr
1
R
2
R
2
R
1
/R
2
=47k
/
47k
DTr
2
R
1
/R
2
=10k
/
47k
External dimensions (Unit : mm)
ROHM : EMT6
EMD4
ROHM : UMT6
EIAJ : SC-88
UMD4N
Abbreviated symbol :D4
Abbreviated symbol : D4
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
Each lead has same dimensions
0
0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)


Packaging specifications
Taping
Code
Basic ordering
unit (pieces)
Package
TR
3000
UMD4N
T2R
8000
EMD4
Type



EMD4 / UMD4N
Transistors
Rev.B
2/4
Absolute maximum ratings (Ta = 25
C)
Limits
DTr1(DTC144E)
DTr2(DTA114Y)
Parameter
Symbol
V
CC
-
50
-
40 to
+
6
-
70
-
100
50
-
10 to
+
40
30
100
120(1ELEMENT)
150(TOTAL)
V
V
mA
mW
V
IN
I
O
I
C(Max.)
Pd
150
-
55 to
+
150
C
C
Tj
Tstg
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature

Electrical characteristics (Ta = 25
C)
DTr 1
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
-
3
-
-
-
32.9
68
0.8
-
-
-
0.1
-
-
47
-
1
250
0.5
-
0.3
0.18
0.5
61.1
-
1.2
-
V
V
CC
=
5V, I
O
=
100
A
V
O
=
0.3V, I
O
=
2mA
I
O
/I
I
=
10mA/0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
O
=
5V, I
O
=
5mA
V
CE
=
10V, I
E
=-
5mA, f
=
100MHz
V
mA
A
k
-
-
-
-
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Transition frequency of the device

DTr 2
Parameter
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
-
-
1.4
-
-
-
7
68
3.7
-
-
-
-
0.1
-
-
10
-
4.7
250
-
0.3
-
-
0.3
-
0.88
-
0.5
13
-
5.7
-
V
V
CC
= -
5V, I
O
= -
100
A
V
O
= -
0.3V, I
O
= -
1mA
I
O
/I
I
= -
5mA /
-
0.25mA
V
I
= -
5V
V
CC
= -
50V, V
I
=
0V
V
O
= -
5V, I
O
= -
5mA
V
CE
= -
10V, I
E
=
5mA, f
=
100MHz
V
mA
A
k
-
-
-
-
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Transition frequency of the device














EMD4 / UMD4N
Transistors
Rev.B
3/4
Electrical characteristic curves
DTr
1
(NPN)
V
O
=
0.3V
100
200
500
1m
2m
5m 10m
20m
50m 100m
100
50
20
10
5
2
1
500m
200m
100m
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.1 Input voltage vs. output current
(ON characteristics)
25
C
100
C
Ta
=-
40
C
V
CC
=
5V
0.5
1.0
1.5
2.0
2.5
3.0
0
10m
5m
2m
1m
500
200
100
50
20
10
5
1
2
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io
(A)
Ta
=
100
C
25
C
-
40
C
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
V
O
=
5V
100
200
500
1m
2m
5m 10m 20m
50m 100m
1k
500
200
100
50
20
10
5
2
1
Fig.3 DC current gain vs. output
current
Ta
=
100
C
25
C
-
40
C
100
200
500
1m
2m
5m 10m 20m
50m 100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
O
/l
I
=
20
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
Fig.4 Output voltage vs. output
current
Ta
=
100
C
25
C
-
40
C


DTr
2 (
NPN)
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
Fig.5 Input voltage vs. output current
(ON characteristics)
V
O
=-
0.3V
-
100
-
50
-
20
-
10
-
200m
-
100m
-
100
-
1m
-
10m
-
100m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
-
5
-
2
-
1
-
500m
25
C
100
C
Ta
=-
40
C
INPUT VOLTAGE : V
I(off)
(V)
OUTPUT CURRENT : Io
(A)
Fig.6 Output current vs. input voltage
(OFF characteristics)
V
CC
=-
5V
0
-
3.0
-
10m
-
1
-
2m
-
5m
-
1m
-
200
-
500
-
100
-
20
-
50
-
10
-
2
-
5
-
0.5
-
1.0
-
1.5
-
2.0
-
2.5
Ta
=
100
C
25
C
-
40
C
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
Fig.7 DC current gain vs. output
current
V
O
=-
5V
1k
500
200
100
50
20
10
5
2
1
-
100
-
1m
-
10m
-
100m
-
200
-
2m
-
20m
-
500
-
5m
-
50m
Ta
=
100
C
25
C
-
40
C




EMD4 / UMD4N
Transistors
Rev.B
4/4
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
Fig.8 Output voltage vs. output
current
l
O
/l
I
=
20
-
500m
-
1
-
200m
-
100m
-
10m
-
50m
-
5m
-
20m
-
2m
-
1m
Ta
=
100
C
25
C
-
40
C
-
100
-
1m
-
10m
-
100m
-
200
-
2m
-
20m
-
500
-
5m
-
50m




Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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