EMH10 / UMH10N / IMH10A
Transistors
General purpose (dual digital transistors)
EMH10 / UMH10N / IMH10A
Features
1) Two DTC123J chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
The following characteristics apply to both DTr
1
and DTr
2
.
Equivalent circuit
R
1
=2.2k
R
2
=47k
R
1
=2.2k
R
2
=47k
DTr
2
DTr
1
(3)
(2)
(1)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
(4)
(5)
(6)
(3)
(2)
(1)
R
1
R
2
R
2
R
1
EMH10 / UMH10N
IMH10A
Packaging specifications
UMH10N
EMH10
Type
IMH10A
TN
3000
T2R
8000
-
-
-
-
-
-
T110
3000
Package
Code
Basic ordering unit (pieces)
Taping
External dimensions (Units : mm)
ROHM : EMT6
ROHM : SMT6
EIAJ : SC-74
EMH10
IMH10A
ROHM : UMT6
EIAJ : SC-88
UMH10N
Abbreviated symbol : H10
Abbreviated symbol : H10
Abbreviated symbol : H10
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
EMH10 / UMH10N / IMH10A
Transistors
Absolute maximum ratings (Ta=25
C)
Supply voltage
Input voltage
Output current
Storage temperature
Power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Parameter
Symbol
Limits
Unit
V
CC
50
V
V
IN
12
V
-
5
I
O
100
mA
I
C (Max.)
100
mA
Tstg
-
55~
+
150
C
Pd
EMH10,UMH10N
150 (TOTAL)
mW
IMH10A
300 (TOTAL)
1
2
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
I
V
I (off)
V
I (on)
V
O (on)
I
O (off)
R
1
G
I
R
2
/R
1
Min.
-
1.1
-
-
-
1.54
80
17
-
-
0.1
-
-
2.2
-
21
0.5
-
0.3
3.6
0.5
2.86
-
26
V
V
CC
=5V, I
O
=100
A
V
O
=0.3V, I
O
=5mA
I
O
/I
I
=5mA/0.25mA
V
I
=5V
V
CC
=50V, V
I
=0V
-
V
O
=5V, I
O
=10mA
V
mA
A
k
-
-
-
Typ.
Max.
Unit
Conditions
f
T
-
250
-
V
CE
=10mA, I
E
=
-
5mA, f=100MHz
MHz
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
Transition frequency of the device
Electrical characteristic curves
INPUT VOLTAGE : V
I (on)
(V)
OUTPUT CURRENT : I
O
(A)
100
200
500
1m
2m
5m 10m 20m
50m100m
100
50
20
10
5
2
1
500m
200m
100m
V
O
=0.3V
Ta=
-
40
C
25
C
100
C
Fig.1 Input voltage vs. output current
(ON characteristics)
INPUT VOLTAGE : V
I (off)
(V)
OUTPUT CURRENT : Io
(A)
0
3.0
10m
1
2m
5m
1m
200
500
100
20
50
10
2
5
0.5
1.0
1.5
2.0
2.5
V
CC
=5V
Ta=100
C
25
C
-
40
C
Fig.2 Output current vs. input voltage
(OFF characteristics)
OUTPUT CURRENT : I
O
(A)
DC CURRENT GAIN : G
I
1k
500
200
100
50
20
10
5
2
1
100
200
500
1m
2m
5m 10m 20m 50m 100m
V
O
=5V
Ta=100
C
25
C
-
40
C
Fig.3 DC current gain vs. output
current
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