EMH3 / UMH3N / IMH3A
Transistors
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
Features
1) Two DTAK13Ts chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both DTr
1
and DTr
2
.
Equivalent circuit
DTr
2
DTr
1
(3)
(2)
(1)
(4)
(5)
(6)
R
1
R
1
R
1
=4.7k
R
1
=4.7k
DTr
2
DTr
1
(4)
(5)
(6)
(3)
(2)
(1)
R
1
R
1
EMH3 / UMH3N
IMH3A
Packaging specifications
Package
Taping
Code
UMH3N
EMH3
Type
IMH3A
T2R
8000
-
-
TN
3000
-
-
T110
3000
-
-
Basic ordering
unit (pieces)
External dimensions
(Units : mm)
ROHM : EMT6
ROHM : SMT6
EIAJ : SC-74
EMH3
IMH3A
ROHM : UMT6
EIAJ : SC-88
UMH3N
Abbreviated symbol : H3
Abbreviated symbol : H3
Abbreviated symbol : H3
Each lead has same dimensions
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
For the very latest product data and news visit angliac.com
EMH3 / UMH3N / IMH3A
Transistors
Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
V
CBO
50
V
V
CEO
50
V
V
EBO
5
V
I
C
100
mA
Tj
150
C
Tstg
-
55~
+
150
C
Pc
EMH3,UMH3N
150 (TOTAL)
mW
IMH3A
300 (TOTAL)
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
R
1
Min.
50
50
5
-
-
100
-
3.29
-
-
-
-
-
250
-
4.7
-
-
-
0.5
0.5
600
0.3
6.11
V
I
C
=50
A
I
C
=1mA
I
E
=50
A
V
CB
=50V
V
EB
=4V
V
CE
=5V, I
C
=1mA
I
C
/I
B
=5mA/0.25mA
-
V
V
A
A
-
V
k
Typ.
Max.
Unit
Conditions
f
T
-
250
-
V
CE
=10mA, I
E
=
-
5mA, f=100MHz
MHz
Transition frequency of the device
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Input resistance
Electrical characteristic curves
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(A)
V
CE
=
5V
100
200
500
1m
2m
5m 10m 20m 50m100m
1k
500
200
100
50
20
10
5
2
1
Ta=100
C
25
C
-
40
C
Fig.1 DC current gain vs. collector
current
100
200
500
1m
2m
5m 10m 20m
50m100m
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Ta=100
C
25
C
-
40
C
l
C
/l
B
=20
Fig.2 Collector-emitter saturation
voltage vs. collector current
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
For the very latest product data and news visit angliac.com
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