EMX18 / UMX18N
Transistors
General purpose transistors
(dual transistors)
EMX18 / UMX18N
Features
1) Two 2SC5585 chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Structure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr
1
and Tr
2.
Equivalent circuit
EMX18 / UMX18N
(3)
(2)
(1)
(4)
(6)
(5)
Tr
2
Tr
1
External dimensions (Units : mm)
ROHM : EMT6
EMX18
ROHM : UMT6
EIAJ : SC-88
UMX18N
Abbreviated symbol : X18
Abbreviated symbol : X18
Each lead has same dimensions
Each lead has same dimensions
0~0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Power dissipation
1 120mW per element must not be exceeded.
Parameter
Symbol
Limits
Unit
V
CBO
15
V
12
V
V
V
CEO
V
EBO
6
I
C
mA
500
Tj
150
C
Tstg
-
55
+
150
C
Pd
150 (TOTAL)
mW
1
EMX18 / UMX18N
Transistors
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE (sat)
Cob
Min.
15
12
6
-
-
270
-
-
-
-
-
-
-
-
90
7.5
-
-
-
0.1
0.1
680
250
-
V
I
C
=10
A
I
C
=1mA
I
E
=10
A
V
CB
=15V
V
EB
=6V
V
CE
=2V, I
C
=10mA
I
C
/I
B
=200mA/10mA
V
V
A
A
-
mV
PF
Typ. Max. Unit
Conditions
f
T
-
320
-
V
CE
=2V, I
E
=
-
10mA, f
=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Collector-emitter saturation voltage
Output capacitance
Packaging specifications
Package
Code
TN
3000
Taping
Basic ordering
unit (pieces)
UMX18N
T2R
8000
EMX18
Type
Electrical characteristic curves
0
1
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : I
C
(mA)
100
0.5
1.0
1.5
V
CE
= 2V
1000
Ta =
1
25
C
25
C
-40
C
2
5
20
50
200
500
1
2
5
10
20
50
100 200
500
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
10
DC CURRENT GAIN : h
FE
1000
20
50
100
200
500
1000
Ta = 125
C
5
2
1
V
CE
= 2V
25
C
-40
C
1
2
5
10
20
50
100
200
I
C
/I
B
= 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.3 Collector-emitter saturation voltage
vs. collector current (
)
Ta = 125
C
500
1000
25
C
-40
C
EMX18 / UMX18N
Transistors
1
2
5
10
20
50
100
200
Ta = 25
C
1
2
5
10
20
50
100 200
500 1000
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current (
)
I
C
/I
B
=
50
500
1000
20
10
10
20
50
100
200
500
1000
2000
I
C
/I
B
= 20
1
2
5
10
20
50
100 200
500 1000
COLLECTOR SATURATION VOLTAGE : V
BE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Ta = -40
C
5000
10000
25
C
125
C
2
1
5
10
20
50 100 200
500 1000
1
2
5
10
20
50
100
200
500
1000
Ta = 25
C
V
CE
= 2V
f
T
(
MH
Z
)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.6 Collector output capacitance
Emitter input capacitance
vs. base voltage
Pulsed
0.2
0.1
0.5
1
2
5
10
20
50
100
1
2
5
10
20
50
100
200
500
1000
Ta = 25
C
I
E
= 0A
f
= 1MHz
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.7 Collector output capacitance
vs collector-base voltage
Emitter input capacitance
vs emitter-base voltage
Cib
Cob
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