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Электронный компонент: FMS4

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FMS3 / FMS4 / IMT4
Transistors
General purpose (dual transistors)
FMS3 / FMS4 / IMT4
!Features
1) Two 2SA1514K chips in an AMT package.
2) High breakdown voltage.
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
-
120
-
120
-
5
-
50
300 (TOTAL)
150
-
55
+
150
Unit
V
V
V
mA
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
200mW per element must not be exceeded.
!
!
!
!Package, marking, and Packaging specifications
FMS3
SMT5
S3
T148
3000
FMS4
SMT5
S4
T148
3000
IMT4
SMT6
T4
T108
3000
Part No.
Package
Marking
Code
Basic ordering unit (pieces)
!
!
!
!Circuit diagram
FMS3
FMS4
IMT4
!
!
!
!External dimensions
(Units : mm)
ROHM : SMT5
EIAJ : SC-74A
IMT4
FMS4
FMS3
Each lead has same dimensions
0to0.1
1.1
0.8
0.3to0.6
0.15
1.6
2.8
2.9
0.95
1.9
( 4
)
( 5
)
( 1
)
0.3
( 3
)
0.95
( 2
)
ROHM : SMT5
EIAJ : SC-74A
Each lead has same dimensions
0to0.1
1.1
0.8
0.3to0.6
0.15
1.6
2.8
2.9
0.95
1.9
( 4
)
( 5
)
( 1
)
0.3
( 3
)
0.95
( 2
)
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
0.95
( 2
)
0.95
( 1
)
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
-
120
-
120
-
5
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
-
0.5
-
0.5
V
V
V
A
A
V
I
C
=
-
50
A
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
100V
V
EB
=
-
4V
I
C
/I
B
=
-
10mA/
-
1mA
h
FE
180
-
820
-
V
CE
=
-
6V, I
C
-
2mA
Transition frequency
f
T
-
140
-
MHz
V
CE
=
-
12V, I
E
=2mA, f=100MHz
Transition frequency of the device.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage