FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes
UMN1N /
UMP1N / UMN11N / UMP11N
Switching diode
FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N
!Applications
Ultra high speed switching
!Features
1) A wide variety of configurations are available.
(UMD5, UMD6, SMD5, SMD6)
2) Multiple diodes in one small surface mount package.
3) Diode characteristics are matched in the package.
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
2.8
0.2
1.6
2.9
0.2
1.9
0.2
0.95
0.3
0.15
0
0.1
1.1
0.8
0.1
0.95
0.3
0.6
-
0.1
+
0.2
+
0.1
-
0.05
+
0.1
+
0.2
-
0.1
-
0.06
0
0.1
2.0
0.2
1.3
0.1
0.65 0.65
1.25
0.1
2.1
0.1
+
0.1
-
0.05
0.2
0.15
0.05
0.1Min.
0.7
0.9
0.1
FMN1 / FMP1
UMN1N / UMP1N
IMN10 / IMN11 / IMP11
UMN11N / UMP11N
2.8
0.2
1.6
2.9
0.2
1.9
0.2
0.95
0.3
0.15
0
0.1
1.1
0.8
0.1
0.95
0.3
0.6
-
0.1
+
0.2
+
0.1
-
0.05
+
0.1
+
0.2
-
0.1
-
0.06
0
0.1
2.0
0.2
1.3
0.1
0.65 0.65
1.25
0.1
2.1
0.1
+
0.1
-
0.05
0.2
0.15
0.05
0.1Min.
0.7
0.9
0.1
EIAJ : SC-74A
JEDEC :
-
ROHM : SMD5
EIAJ : SC-88A
JEDEC : SOT-353
ROHM : UMD5
EIAJ : SC-74
JEDEC : SOT-457
ROHM : SMD6
FMP1 : P1
FMN1 : N1
Marking
UMP1N : P1
UMN1N : N1
Marking
EIAJ : SC-88
JEDEC : SOT-363
ROHM : UMD6
UMP11N : P11
UMN11N : N11
Marking
IMN11 : N11
IMP11 : P11
IMN10 : N10
Marking
(All leads have the same dimensions.)
(All leads have the same dimensions.)
(All leads have the same dimensions.)
(All leads have the same dimensions.)
!
!
!
!Circuit
FMN1
FMP1
IMN10
SMD5 / SMD6 Package
UMD5 / UMD6 Package
UMN1N
UMP1N
UMN11N
UMP11N
IMN11
IMP11
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes
UMN1N /
UMP1N / UMN11N / UMP11N
!
!
!
!Absolute maximum ratings
(Ta=25
C)
1 Not to exceed 200mW per element.
2 Not to exceed 120mW per element.
Type
V
R
(V)
I
FM
(mA)
Pd (mW)
UMN1N
80
80
80
25
0.25
150
FMP1
UMP1N
80
80
80
25
0.25
150
-
55
+
150
IMN10
80
80
300
100
4
150
-
55
+
150
80
80
300
100
4
150
-
55
+
150
80
80
300
100
4
150
-
55
+
150
150/80
150/80
-
55
+
150
FMN1
300
1
150
2
150
2
UMN11N
IMN11
UMP11N
IMP11
V
RM
(V)
(1
s)
(TOTAL)
I
O
(mA)
Isurge
(A)
Peak
reverse
voltage
DC
reverse
voltage
Tj
(C)
Tstg
(C)
Peak
forward
current
Mean
rectifying
current
Surge
current
Power
dissipation
Junction
temperature
Storage
temperature
!
!
!
!Electrical characteristics
(Ta=25
C)
Type
Cond.
V
F
(V)
Max.
Cond.
Cond.
Max.
Cond.
C
T
(pF)
Max.
Max.
I
F
(mA)
V
R
(V)
I
F
(mA)
V
R
(V)
f (MHz)
V
R
(V)
FMN1
UMN1N
0.9
5
0.1
70
3.5
6
1
4
6
5
FMP1
UMP1N
0.9
5
0.1
70
3.5
6
1
4
6
5
IMN10
1.2
100
0.1
70
3.5
6
1
4
6
5
1.2
100
0.1
70
3.5
6
1
4
6
5
1.2
100
0.1
70
3.5
6
1
4
6
5
t
rr
(ns)
I
R
(
A)
UMN11N
IMN11
UMP11N
IMP11
Forward voltage
Reverse recovery time
Reverse current
Capacitance between terminals
!
!
!
!Electrical characteristic curves
(Ta=25
C)
0
0
125
100
75
50
25
25
50
75
100
125
150
AMBIENT TEMPERATURE : Ta (C)
POWER DISSIPATION : P
d
/ P
dMax.
(%)
Fig.1 Power reduction curve
85
C
0
Ta=25C
50
C
-
30
C
0.1
0.2
0.5
1
2
5
10
20
50
0.2
0.4
0.6
0.8
1.0
1.2
0
C
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 2 Forward current vs.
forward voltage
(P Type)
0
Ta=100C
75C
50C
25C
0C
-
25C
1 000
100
10
1.0
0.1
0.01
10
20
30
40
50
REVERSE CURRENT : I
R
(
nA)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Reverse current vs.
reverse voltage
(P Type)
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
Diodes
UMN1N /
UMP1N / UMN11N / UMP11N
Ta=25C
85
C
0
50
C
-
30
C
0.1
0.2
0.5
1
2
5
10
20
50
0.2
0.4
0.6
0.8
1.0
1.2
0
C
FORWARD CURRENT : I
F
(
mA)
FORWARD VOLTAGE : V
F
(V)
Fig.4 Forward current vs.
forward voltage
(N Type)
0
Ta=100C
75C
50C
25C
0C
-
25C
1 000
100
10
1.0
0.1
0.01
10
20
30
40
50
REVERSE CURRENT : I
R
(
nA)
REVERSE VOLTAGE : V
R
(V)
Fig.5 Reverse current vs.
reverse voltage
(N Type)
0
0
2
2
4
6
8
10 12 14 16
N Type
4
Ta=25C
f=1MHz
P Type
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig.6 Capacitance between
terminals vs.
reverse voltage
P Type
0
0
N Type
Ta=25C
V
R
=6V
10
9
8
7
6
5
4
3
2
1
1
2
3
4
5
6
7
8
9
10
REVERSE RECOVERY TIME : t
rr
(ns)
FORWARD CURRENT : I
F
(mA)
Fig.7 Reverse recovery time vs.
forward current
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
5k
0.01
F
100ns
I
R
0.1I
R
t
rr
OUTPUT
0
INPUT
D.U.T.
Fig.8 Reverse recovery time (t
rr
) measurement circuit
PDF 
ZIP