QSZ3
Transistors
1/4
General purpose transistor
(isolated transistor and diode)
QSZ3
A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package.
Applications
DC / DC converter
Motor driver
Features
1) Low V
CE
(sat)
2) Small package
Structure
Silicon epitaxial planar transistor
Equivalent circuit
Tr2
Tr1
(4)
(5)
(2)
(3)
(1)
Packaging specifications
Type
QSZ3
TSMT5
Z03
TR
3000
Package
Marking
Code
Basic ordering unit(pieces)
External dimensions (Unit : mm)
2.9
2.8
1.9
1.6
0.95
0.95
0.4
(1)
(5)
(3)
(2)
(4)
0
0.1
0.16
0.85
0.7
0.3
0.6
ROHM : TSMT5
QSZ3
Abbreviated symbol : Z03
Each lead has same dimensions
QSZ3
Transistors
2/4
Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
Limits
-
15
-
12
-
6
-
3
500
150
-
55 to
+
150
-
6
2
3
3
1
Unit
V
V
V
A
A
mW/Total
1.25
W/Total
0.9
W/Element
C
C
1
Single pulse, Pw=1ms.
2
Each terminal mounted on a recommended land.
3
Mounted on a 25
25
t
0.8mm ceramic substrate.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Tr 2
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
Pc
Tj
Tstg
Limits
15
12
6
3
500
150
-
50 to
+
150
6
2
3
3
1
Unit
V
V
V
A
A
mW/Total
1.25
W/Total
0.9
W/Element
C
C
1
Single pulse, Pw=1ms.
2
Each terminal mounted on a recommended land.
3
Mounted on a 25
25
t
0.8mm ceramic substrate.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
= -
10V, I
E
=
0A, f
=
1MHz
f
T
-
280
-
MHz
V
CE
= -
2V, I
E
=
500mA, f
=
100MHz
BV
CBO
-
15
-
-
V
I
C
= -
10
A
BV
CEO
-
12
-
-
V
I
C
= -
1mA
BV
EBO
-
6
-
-
V
I
E
= -
10
A
I
CBO
-
-
-
100
nA
V
CB
= -
15V
I
EBO
-
-
-
100
nA
V
EB
= -
6V
V
CE(sat)
-
-
120
-
250
mV
I
C
= -
1.5A, I
B
= -
30mA
h
FE
270
-
680
-
V
CE
= -
2V, I
C
= -
500mA
Cob
-
30
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
Tr 2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
-
360
-
MHz
V
CE
=
2V, I
E
= -
500mA, f
=
100MHz
BV
CBO
15
-
-
V
I
C
=
10
A
BV
CEO
12
-
-
V
I
C
=
1mA
BV
EBO
6
-
-
V
I
E
=
10
A
I
CBO
-
-
100
nA
V
CB
=
15V
I
EBO
-
-
100
nA
V
EB
=
6V
V
CE(sat)
-
120
250
mV
I
C
=
1.5A, I
B
=
30mA
h
FE
270
-
680
-
V
CE
=
2V, I
C
=
500mA
Cob
-
30
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Pulsed
QSZ3
Transistors
3/4
Electrical characteristic curves
Tr1(PNP)
Fig1. DC current gain vs. collector current
0.001
0.01
0.1
10
100
1000
1
10
COLLECTOR CURRENT : I
C
(
A)
DC CURRENT GAIN : h
FE
V
CE
=-
2V
Pulsed
25
C
125
C
-
40
C
Fig.2 Collector-emitter saturation voltage
vs. collector current
COLLECTOR CURRENT : I
C
(
A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(
V)
0.001
0.01
0.1
0.001
0.01
0.1
1
10
I
C
/I
B
=20/1
Pulsed
1
25
C
125
C
-
40
C
10
10
0.1
1
0.001
0.01
0.1
1
I
C
/I
B
=20/1
Pulsed
COLLECTOR CURRENT : I
C
(
A)
BASE SATURATION VOLTAGE : V
BE(sat)
(
V)
Fig.3 Base
-
emitter saturation voltage
vs.collector current
25
C
125
C
-
40
C
BASE TO EMITTER CURRENT : V
BE
(V
)
Fig.4 Grounded emitter propagation
charactereistics
10
COLLECTOR CURRENT : I
C
(A)
0.001
0.01
0.1
1
10
0.1
1
I
C
/I
B
=20/1
Pulsed
25
C
125
C
-
40
C
Fig.5 Gain bandwidth product
vs. emitter current
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fr (MHz)
10
100
1000
0.01
0.1
1
10
Ta
=
25
C
V
CE
=
2V
f
=
100MHz
Fig 6. Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base volatage
1000
100
10
0.001
0.01
0.1
1
10
100
EMITTER INPUT CAPACITANCE : Cib (pF)
Cob
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
I
C
=
0A
f=1MHz
Ta=25
C
Cib
Tr2(NPN)
10
100
1000
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.7 DC current gain
vs. collector current
VCE=
-
2V
Pulsed
Ta=100 C
Ta=25 C
Ta=40 C
0.01
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.8 Collector-emitter saturation voltage
vs. collector current
IC/IB=20/1
V
CE
=2V
Pulsed
Ta=25 C
Ta=
-
45 C
Ta=100 C
0.1
1
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
Fig.9 Base-emitter saturation voltage
vs.collector current
Ta=25 C
Pulsed
I
C
/I
B
=20/1
I
C
/I
B
=50/1
I
C
/I
B
=10/1
QSZ3
Transistors
4/4
0.1
1
10
0.001
0.01
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT :I
C
(A)
0.1
1
10
Fig.10 Grounded emitter propagation
characteristics
IC/IB=20/1
Pulsed
Ta=100 C
Ta=25 C
Ta=
-
45 C
10
100
1000
0.01
0.1
1
10
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : fT (MHz)
Ta=25 C
VCE=
-
2V
f= 100MHz
Fig.11 Gain bandwidth product
vs. emitter current
10
100
1000
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
BE(sat)
(V)
Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
IC=0A
f=1MHz
Ta=
25 C
Cib
Cob
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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