RB051L-40
Diodes
Schottky barrier diode
RB051L-40
Applications
High frequency rectification
For switching power supply
Features
1) Compact power mold type. (PMDS)
2) Ultra low V
F
. (V
F
=0.29V Typ. at 1A)
3) V
RM
=40V guaranteed.
Construction
Silicon epitaxial planar
External dimensions (Units : mm)
ROHM : PMDS
EIAJ :
-
JEDEC : SOD-106
0.1
CATHODE MARK
4.5
0.2
2.6
0.2
2.0
0.2
1.2
0.3
1.5
0.2
5.0
0.3
+
0.02
-
0.1
3
1
,
Date of manufacture EX. 1999.12
9, C
Absolute maximum ratings (Ta = 25
C)
T
L
90
C Max. 180
half sine wave when mounted on an alumina substrate
(82
30
1.0 mm)
Parameter
Symbol
V
RM
Limits
40
Unit
V
V
R
20
V
I
O
3.0
A
I
FSM
70
A
Tj
125
C
Tstg
-
40~
+
125
C
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
(60Hz
1 )
Junction temperature
Storage temperature
Electrical characteristics (Ta = 25
C)
Parameter
Forward voltage
Reverse current
Symbol
Typ.
Conditions
V
F
1
V
F
2
-
-
I
R
1
I
R
2
-
-
Max.
0.35
0.45
1.0
150
Unit
V
V
mA
A
I
F
=
1.0A
I
F
=
3.0A
V
R
=
20V
V
R
=
15V
RB051L-40
Diodes
Electrical characteristic curves (Ta = 25
C)
0
0.2
0.3
0.4
0.5
0.1
FORWARD CURRENT :
I
F
(A)
FORWARD VOLTAGE : V
F
(V)
C
5
2
1
=
a
T
C
5
7
C
5
2
C
5
2
-
Fig. 1 Forward characteristics
1m
100m
10m
10
1
0
20
30
40
50
10
1
10
1m
100
100m
10m
REVERSE CURRENT :
I
R
(A)
REVERSE VOLTAGE : V
R
(V)
Ta
=
125
C
75
C
25
C
-
25
C
Fig. 2 Reverse characteristics
0
10
15
20
25
30
35
5
10
100
1000
TERMINAL CAPACITANCE :
C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig. 3 Capacitance between
terminals characteristics
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(A)
AMBIENT TEMPERATURE : Ta (
C)
D
=
0.8
D
=
0.5
sine
D
=
0.3
D
=
0.2
D
=
0.1
D
=
0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
F
I
O
Fig. 4 Derating curve (I
O
- Ta)
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(A)
LEAD TEMPERATURE : T
L
(
C)
D
=
0.8
D
=
0.5
sine wave
D
=
0.3
D
=
0.2
D
=
0.1
D
=
0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
O
I
F
Fig. 5 Derating curve (I
O
- T
L
)
(When mounted on
almina PCBs)
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
FOR
W
ARD PO
WER DISSIP
A
TION :
P
F
(
W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
D
=
0.5
D
=
0.8
DC
Tp
T
D
=
Tp / T
Tj
=
Tj Max.
I
F
I
O
sine
Fig. 6 Forward power dissipation
characteristics
0
0
2
4
6
8
10 12 14 16 18 20
0.10
0.20
0.30
0.40
0.50
REVERSE PO
WER DISSIP
A
TION :
P
R
(
W)
REVERSE VOLTAGE : V
R
(V)
D
=
0.8
sine
V
R
V
R
0
Tp
T
Tj
=
Tj Max.
Tj
=
Tj Max.
D
=
Tp / T
DC
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
D
=
0.5
Fig. 7 Reverse power dissipation
characteristics
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(A)
AMBIENT TEMPERATURE : Ta (
C)
D
=
0.8
D
=
0.5
sine
D
=
0.3
D
=
0.2
D
=
0.1
D
=
0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
F
I
O
Fig. 8 Derating curve
(when mounted on a glass
epoxy PCBs board)
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