RB053L-30
Diodes
Schottky barrier diode
RB053L-30
Applications
High frequency rectification
For switching power supply
Features
1) Compact power mold type. (PMDS)
2) Ultra low V
F
/ Low I
R
.
3) V
RM
=30V guaranteed.
Construction
Silicon epitaxial planar
External dimensions (Units : mm)
ROHM : PMDS
EIAJ :
-
JEDEC : SOD-106
0.1
CATHODE MARK
4.5
0.2
2.6
0.2
2.0
0.2
1.2
0.3
1.5
0.2
5.0
0.3
+
0.02
-
0.1
5
6
,
Date of manufacture EX. 1999.12
9, C
Absolute maximum ratings (Ta = 25
C)
T
C
Max. = 90
C when mounted on alumina PCBs.
Parameter
Symbol
V
RM
Limits
30
Unit
V
V
R
30
V
I
O
3.0
A
I
FSM
70
A
Tj
125
C
Tstg
-
40~
+
125
C
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge current
(60Hz
1 )
Junction temperature
Storage temperature
Electrical characteristics (Ta = 25
C)
Forward voltage
Reverse current
Parameter
Symbol
Typ.
Min.
Conditions
V
F
-
-
I
R
1
I
R
2
-
-
-
-
Max.
0.42
90
200
Unit
V
A
A
I
F
=
3.0A
V
R
=
15V
V
R
=
30V
RB053L-30
Diodes
Electrical characteristic curves (Ta = 25
C)
FORWARD CURRENT :
I
F
(A)
FORWARD VOLTAGE : V
F
(V)
Fig.1 Forward characteristics
0
0.2
0.3
0.4
0.5
0.1
1m
100m
10m
10
1
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
REVERSE CURRENT :
I
R
(A)
REVERSE VOLTAGE : V
R
(V)
Fig.2 Reverse characteristics
0
20
30
40
10
1
10
1m
100
100m
10m
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
TERMINAL CAPACITANCE :
C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Capacitance between
terminals characteristics
0
10
20
30
100
1000
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(A)
AMBIENT TEMPERATURE : Ta (
C)
D
=
0.8
D
=
0.5
sine
D
=
0.3
D
=
0.2
D
=
0.1
D
=
0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
F
I
O
Fig.4 Derating curve (I
O
- Ta)
(When mounted on
alumina PCBs)
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(A)
LEAD TEMPERATURE : T
L
(
C)
D
=
0.8
D
=
0.5
sine wave
D
=
0.3
D
=
0.2
D
=
0.1
D
=
0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
O
I
F
Fig.5 Derating curve (I
O
- T
L
)
(When mounted on
alumina PCBs)
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
FOR
W
ARD PO
WER DISSIP
A
TION :
P
F
(
W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
D
=
0.5
D
=
0.8
DC
Tp
T
D
=
Tp / T
Tj
=
Tj Max.
I
F
I
O
sine
Fig.6 Forward power dissipation
characteristics
REVERSE PO
WER DISSIP
A
TION :
P
R
(
W)
REVERSE VOLTAGE : V
R
(V)
Fig.7 Reverse power dissipation
characteristics
0
0
2
4
6
8
10 12 14 16 18 20
0.05
0.10
0.15
0.20
0.30
0.25
D
=
0.8
sine
V
R
V
R
0
Tp
T
Tj
=
Tj Max.
Tj
=
Tj Max.
D
=
Tp / T
DC
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
D
=
0.5
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(A)
AMBIENT TEMPERATURE : Ta (
C)
D
=
0.8
D
=
0.5
sine
D
=
0.3
D
=
0.2
D
=
0.1
D
=
0.05
DC
Tp
T
D
=
Tp / T
V
R
=
V
RM
/ 2
I
F
I
O
Fig.8 Derating curve (I
O
- Ta)
(when mounted on glass
epoxy PCBs)
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