RB060L-40
Diodes
Schottky barrier diode
RB060L-40
!
Applications
High frequency rectification
For switching power supply
!
Features
1) Compact power mold type. (PMDS)
2) I
O
=2A guaranteed despite the size.
3) Low I
R
. (I
R
=10
A Typ.)
!
Construction
Silicon epitaxial planar
!
!
!
!
External dimensions (Units : mm)
ROHM : PMDS
EIAJ :
-
JEDEC : SOD-106
Date of manufacture EX. 1999.12
9, C
0.1
CATHODE MARK
4.50.2
2.60.2
2.00.2
1.20.3
1.50.2
3
6
5.00.3
+
0.02
-
0.1
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
40
V
DC reverse voltage
V
R
40
V
Mean rectifying current
1
2.0
A
I
FSM
70
A
Junction temperature
Tj
125
C
Tstg
-
40
+
125
C
Peak forward surge
current
2
(60Hz,1 )
Storage temperature
I
O
1 When mounted on an alumina PCBs (82
30
1.0 mm board),
180 half sine wave.
2 60Hz,
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Max.
Unit
Conditions
Forward voltage
V
F1
0.50
V
V
F2
0.45
V
Reverse current
I
R
1.0
mA
Thermal resistance
j-a
90
C / W
When mounting on alumina PCBs
j-a
120
C / W
When mounting on glass epoxy PCBs
I
F
=2.0A
I
F
=1.0A
V
R
=40V
RB060L-40
Diodes
!
!
!
!
Electrical characteristics curves (Ta=25
C)
0
0.1
0.2
0.3
0.4
0.5
0.6
FORWARD CURRENT : I
F
(
A)
FORWARD VOLTAGE : V
F
(V)
10
1
100m
10m
Fig.1 Forward characteristics
Ta=125
C
Ta=75
C
Ta=25
C
Fig.2 Reverse characteristics
0
5
10
15
20
25
30
35
40
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
10m
1m
100m
10m
1m
100n
Ta=125C
Ta=75C
Ta=25C
0
5
10
15
20
25
30
35
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
F)
1n
100p
10p
Fig.3 Capacitance between
terminals characteristics
0
0
4.0
3.0
2.0
1.0
25
50
75
100
125
T
Tp
I
O
I
F
DC
D=0.8
D=0.5
sine
D=0.3
D=0.2
D=0.1
D=0.05
D=Tp/T
V
R
=V
RM
/2
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(
A)
AMBIENT TEMPERATURE : Ta (C)
Fig.4 Derating curve
(when mounted on an
alumina PCBs)
0
0
4.0
3.0
2.0
1.0
25
50
75
100
125
T
Tp
I
O
I
F
DC
D=0.8
D=0.5
sine
D=0.3
D=0.2
D=0.1
D=0.05
D=Tp/T
V
R
=V
RM
/2
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(
A)
AMBIENT TEMPERATURE : Ta (C)
Fig.5 Derating curve
(when mounted on a glass
epoxy PCBs)
0
0
4.0
3.0
2.0
1.0
25
50
75
100
125
DC
D=0.8
D=0.5
sine wave
D=0.3
D=0.2
D=0.1
D=0.05
T
Tp
T
O
T
F
D=Tp/T
V
R
=V
RM
/2
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(
A)
LEAD TEMPERATURE : Tl (C)
Fig.6 Derating curve
(when mounted on a glass
epoxy PCBs)
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T
Tp
I
O
D=0.05
D=0.1
D=0.2
D=0.3
sine
D=0.5
DC
D=Tp/T
I
F
T
j=
T
j
Max.
D=0.8
FORWARD POWER DISSIPATION : P
F
(
W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
Fig.7 Forward power dissipation
0
0
1.00
0.80
0.60
0.40
0.20
5
10
15
20
25
30
35
40
0
T
Tp
V
R
V
R
D=0.8
sine
D
=
0.5
D
=
0.3
DC
D=0.05
D=0.1
D=0.2
D
j=
Tp/T
REVERSE POWER DISSIPATION : P
R
(
W)
REVERSE VOLTAGE : V
R
(V)
T
j=
T
j
Max.
T
j=
T
j
Max.
Fig.8 Reverse power dissipation
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