RB081L-20
Diodes
Schottky barrier diode
RB081L-20
Applications
High frequency rectification
For switching power supply
Features
1) Compact power mold type. (PMDS)
2) Ultra low V
F
.( V
F
=0.27V Typ. at 1A )
3) I
O
=5A guaranteed despite the size.
Construction
Silicon epitaxial planar
External dimensions (Units : mm)
ROHM : PMDS
EIAJ :
-
JEDEC : SOD-106
Date of manufacture EX. 1999.12
9,C
0.1
CATHODE MARK
4.50.2
2.60.2
2.00.2
1.20.3
1.50.2
3
9
5.00.3
+
0.02
-
0.1
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
RM
Limits
25
Unit
V
Peak reverse voltage
V
R
20
V
DC reverse voltage
I
O
1
1
5
A
Mean rectifying current
I
O
2
2
4
A
I
FSM
70
A
Peak forward surge current
(60Hz 1 )
Tj
125
C
Junction temperature
Tstg
-
40
+
125
C
Storage temperature
1 When mounted on an alumina substrates (82
30
1.0mm), Tc Max.=90C
2
When mounted on an alumina substrates (82
30
1.0mm), Ta=25C
Electrical characteristics (Ta=25
C)
Parameter
Forward voltage
Reverse current
Conditions
Symbol
Max.
Unit
Typ.
V
F
0.45
V
I
F
=5.0A
I
R
0.7
mA
V
R
=20V
-
-
RB081L-20
Diodes
Electrical characteristics curves (Ta=25
C)
0
0.2
0.3
0.4
0.5
0.6
0.1
100
1m
100m
10m
10A
1A
FORWARD CURRENT :
I
F
(
A)
FORWARD
VOLTAGE : V
F
(V)
Ta=125
C
75
C
25
C
-
25
C
Fig.1 Forward characteristics
1
10
100
1m
10m
100m
1
REVERSE CURRENT :
I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
0
10
20
50
75C
25C
-
25C
30
40
Ta=125C
Fig.2 Reverse characteristics
0
10
15
20
25
30
35
5
10
100
1n
CAPACITANCE BETWEEN TERMINALS :
C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig.3 Capacitance between terminals
characteristics
Fig.4 Derating curve (lo-Ta)
0
4.0
5.0
6.0
0.0
1.0
2.0
3.0
DC
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
AMBIENT TEMPERATURE : Ta (C)
25
50
75
100
125
7.0
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
sine wave
D
=
0.5
D
=
0.8
Fig.5 Derating curve (lo-Tc)
0
4.0
5.0
6.0
7.0
0.0
1.0
2.0
3.0
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
CASE TEMPERATURE : Tc (C)
25
50
75
100
125
8.0
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
sine wave
D
=
0.5
D
=
0.8
DC
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