RB160L-40
Diodes
Schottky barrier diode
RB160L40
Applications
High frequency rectification
For switching power supply.
Features
1) Compact power mold type (PMDS)
2) Low I
R
. (I
R
=5mA Typ.)
3) High reliability
Construction
Silicon epitaxial Planar
External dimensions (Units : mm)
0.1
CATHODE MARK
4.5
0.2
2.6
0.2
2.0
0.2
1.2
0.3
1.5
0.2
3
4
5.0
0.3
+0.02
-
0.1
ROHM : PMDS
EIAJ :
-
JEDEC : SOD-106
,
Date of manufacture EX. 1999. 12
9, C
Absolute maximum ratings (Ta = 25
C)
When mounted on a PCBs board
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
40
V
DC reverse voltage
V
R
40
V
Mean rectifying current
I
O
1
A
Peak forward surge current
I
FSM
70
A
Junction temperature
Tj
125
C
Tstg
C
Storage temperature
-
40~
+
125
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.55
V
I
F
= 1.0A
Reverse current
I
R
-
-
0.1
mA
V
R
= 40V
RB160L-40
Diodes
Electrical characteristic curves (Ta = 25
C)
0
1m
10m
100m
1
10
0.2
0.4
0.6
0.8
1.0
125
C
75
C
25
C
FORWARD CURRENT : I
F
(A)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
0
125
C
100
C
75
C
50
C
25
C
100n
1
10
100
1m
10m
10
20
30
40
50
60
REVERSE CURRENT : I
R
(A)
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
35
0
5
10
15
20
25
30
10n
1n
100p
10p
f = 1MHz
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(F)
Fig. 3 Capacitance between
terminals characteristics
0
1.2
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
2.4
DC
0.8
0.5
0.3
0.2
0.1
D = 0.05
I
F
T
p
I
O
T
d =
T
p
T
sin
FORWARD POWER DISSIPATION : P
F
(W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
Fig. 4 Forward power dissipation
characteristics
0
2
1
50
100
150
AMBIENT TEMPERATURE : Ta (
C)
POWER DISSIPATION : Pd (W)
Fig. 5 Derating curve
20
10
5
10
15
20
REVERSE RECOVERY TIME : trr (ns)
FORWARD CURRENT : I
F
(mA)
0
Fig. 6 Reverse recovery time
characteristics
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