RB160L-60
Diodes
Schottky barrier diode
RB160L60
!Applications
High frequency rectification
For switching power supply.
!Features
1) Compact power mold (PMDS)
2) Low V
F
. (V
F
=0.55V Typ. at 1A)
3) High reliability
!Construction
Silicon epitaxial Planar
!External dimensions
(Units : mm)
0.1
CATHODE MARK
4.5
0.2
2.6
0.2
2.0
0.2
1.2
0.3
1.5
0.2
5.0
0.3
+
0.02
-
0.1
ROHM : PMDS
EIAJ :
-
JEDEC : SOD-106
Date of manufacture EX. RB160L-60
4,4
Manufacture years EX. 1999.7
9,7
!Absolute maximum ratings
(Ta = 25
C)
* When mounted on a PCBs board
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
60
V
DC reverse voltage
V
R
60
V
Mean rectifying current
*
I
O
1
A
Peak forward surge current
I
FSM
30
A
Junction temperature
Tj
125
C
Tstg
C
Storage temperature
-
40
+
125
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
0.58
V
Reverse current
I
R
-
-
0.5
mA
V
R
=
60V
I
F
=
1.0A
-
RB160L-60
Diodes
!Electrical characteristic curves
(Ta = 25
C)
Fig.1 Forward characteristics
0
1m
10m
100m
1
10
0.4
0.6
0.8
FORWARD
CURRENT : I
F
(A)
FORWARD VOLTAGE : V
F
(V)
0.1
0.2
0.3
0.5
0.7
125
C
75
C
25
C
-
25
C
Fig.2 Reverse characteristics
0
100n
1m
10m
10
20
30
40
50
60
REVERSE
CURRENT : I
R
(A)
REVERSE VOLTAGE : V
R
(V)
70
1
n
10
n
1
10
100
-
25
C
25
C
75
C
125
C
Fig.3 Capacitance between
terminals characteristics
35
0
5
10
15
20
25
30
1n
100
10
REVERSE VOLTAGE : V
R
(V)
TERMINAL CAPACITANCE : C
T
(PF)
Fig.4 Derating curve (lo-Ta)
0
1.0
0.0
DC
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
AMBIENT TEMPERATURE : Ta (C)
25
50
75
100
125
2.0
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
sine wave
D
=
0.5
D
=
0.8
V
R
=V
RM
/ 2
D=Tp / T
Fig.5 Derating curve (lo-Tc)
0
1.0
0.0
DC
AVERAGE RECTIFIED FOWARD CURRENT : Io (A)
CASE TEMPERATURE : Tc(C)
25
50
75
100
125
2.0
D
=
0.05
D
=
0.1
D
=
0.2
D
=
0.3
sine wave
D
=
0.5
D
=
0.8
V
R
=V
RM
/ 2
D=Tp / T
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