RB411D
Diodes
Schottky barrier diode
RB411D
!
!
!
!Applications
Low power rectification
For switching power supply
!
!
!
!Features
1) Small surface mounting type. (SMD3)
2) Low V
F
. (V
F
=0.43V Typ. at 0.5A)
3) High reliability.
!
!
!
!Construction
Silicon epitaxial planar
!
!
!
!Circuit
!
!
!
!External dimensions
(Units : mm)
2.8
0.2
1.6
0.3
~
0.6
0.15
0.4
0~0.1
1.1
0.8
0.1
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
+
0.2
-
0.1
+
0.1
-
0.06
+
0.1
-
0.05
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(All leads have the same dimensions)
D 3 E
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
40
V
DC reverse voltage
V
R
20
V
Mean rectifying current
I
O
0.5
A
Peak forward surge current
I
FSM
3
A
Junction temperature
125
C
Storage temperature
C
T
j
T
stg
-
40
~
+
125
60Hz for 1
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F1
-
-
0.3
V
I
F
=
10mA
Forward voltage
V
F2
-
-
0.5
V
I
F
=
500mA
Reverse current
I
R
-
-
30
A
V
R
=
10V
Capacitance between terminals
-
20
-
pF
V
R
=
10V, f
=
1MHz
Note) sensitive product handling required.
C
T
RB411D
Diodes
!
!
!
!Electrical characteristic curves
(Ta = 25
C)
0
1
100m
10m
1m
100
10
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
FORWARD CURRENT : I
F
(
A)
FORWARD VOLTAGE : V
F
(V)
Typ.
pulse measurement
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Fig. 1 Forward characteristics
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
Typ.
pulse measurement
0
5
10
15
20
25
30
35
10m
1m
100
10
1
0.1
Fig. 2 Reverse characteristics
Ta
=
125
C
Ta
=
75
C
Ta
=
25
C
0
1
10
100
1 000
5
10
15
20
25
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristic
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