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Электронный компонент: RB421D

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RB421D
Diodes
Rev.A
1/3
Schottky barrier diode
RB421D

Applications
External dimensions (Unit : mm) Land size figure (Unit : mm)
Low power rectification

Features
1) Small mold type. (SMD3)
2) Low I
R
.
3) High reliability.

Construction
Silicon epitaxial planar
Structure
ROHM : SMD3
JEITA : SC-59
week code
JEDEC :S0T-346
0.4
0.1
0.06
2.90.2
2.8
0.
2
1.90.2
1.
6
0.2
0.1
0.95
0.95
0.1
0.05
00.1
0.15
1.10.2
0.01
0.80.1
(2)
(1)
(3)
0.
3
0.6
Each lead has same dimension
SMD3
1.
0M
IN
.
0.8MIN.
2.
4
0.95
1.9



Taping specification (Unit : mm)
3.20.1
4.00.1
4.00.1
2.00.05
1.50.1
0
3.
5
0.
05
1.
75
0.
1
8.
0
0.
2
1.350.1
3.
2
0
.
1
1.05MIN
3.
2
0.
1
0.30.1
5.
5
0
.
2
0
0.
5










Absolute maximum ratings (Ta = 25
C)
Symbol
Unit
V
RM
V
V
R
V
Io
mA
I
FSM
A
Tj
Tstg
orward current surge peak
60Hz
1cyc
*1
1
125
-40 to +125
Limits
40
100
Parameter
ard current
*1
40

Reverse voltage (DC)
Average rectified forw
F
Junction temperature
Storage temperature
(*1) Rating of per diode
Reverse voltage (repetitive peak)
Electrical characteristics (Ta = 25
C)



Symbol
Min.
Typ.
Max.
Unit
V
F
1
-
-
0.55
V
I
F
=100mA
V
F
2
-
-
0.34
V
I
F
=10mA
Reverse current
I
R
1
-
-
30
A
V
R
=10V
Capacitance between terminals
Ct1
-
6
-
pF
V
R
=10V , f=1MHz
Conditions
Parameter
Forward voltage
RB421D
Diodes
Rev.A
2/3
Electrical characteristic curves (Ta = 25
C)
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
R
W
A
R
D

C
U
RRE
N
T
:
I
F(
m
A
)
R
E
V
E
R
S
E

C
U
RRE
N
T
:
I
R(u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CAP
A
CI
TAN
C
E BE
T
W
E
E
N
TE
RM
INA
L
S
:
C
t
(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
F
O
R
W
AR
D

VO
L
T
AG
E
:
VF
(
m
V)
R
E
V
E
RS
E

C
U
RRE
N
T
:IR
(
u
A
)
IR DISPERSION MAP
CAPACIT
A
N
C
E

BE
T
W
E
E
N
TE
RM
I
N
A
L
S
:
C
t
(
p
F
)
Ct DISPERSION MAP
IFSM DISRESION MAP
PE
A
K
S
UR
GE
FO
RW
A
R
D
C
U
RR
E
N
T:I
F
S
M
(A
)
PE
AK S
U
R
G
E
FO
RW
A
R
D

C
U
RRE
N
T
:IFS
M
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
AK S
U
R
G
E
FO
RW
A
R
D

C
U
RRE
N
T
:IFS
M
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
A
N
SIE
N
T
T
H
A
E
R
M
A
L
I
M
P
E
D
A
N
C
E
:
R
t
h
(
/
W
)
trr DISPERSION MAP
F
O
R
W
AR
D

VO
L
T
A
G
E:
VF
(
m
V)
VF DISPERSION MAP
RES
E
R
V
E

RE
CO
V
E
R
Y

T
IM
E
:
tr
r
(
n
s
)
0.01
0.1
1
10
100
0
100
200
300
400
500
600
0.01
0.1
1
10
100
1000
10000
0
5
10
15
20
25
30
35
1
10
100
0
10
20
30
f=1MHz
420
430
440
450
460
470
AVE:439.5mV
Ta=25
IF=100mA
n=30pcs
260
270
280
290
300
310
AVE:281.5mV
Ta=25
IF=10mA
n=30pcs
0
5
10
15
20
25
30
Ta=25
VR=10V
n=10pcs
AVE:2.548uA
0
5
10
15
20
AVE:5.50A
8.3ms
Ifsm
1cyc
0
5
10
15
20
25
30
AVE:6.20ns
0
5
10
15
0.1
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
15
0.1
1
10
100
t
Ifsm
1
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board
Ta=25
f=1MHz
VR=0V
n=10pcs
Ta=-25
Ta=125
Ta=75
Ta=25
Ta=-25
Ta=125
Ta=25
Ta=75
0
1
2
3
4
5
6
7
8
9
10
AVE:6.09pF
Ta=25
f=1MHz
VR=10V
n=10pcs
RB421D
Diodes
Rev.A
3/3

FO
R
W
A
R
D

PO
WER
D
I
SSI
PAT
I
ON:P
f
(
W)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
RE
VE
R
S
E

P
O
W
E
R
D
I
SSIP
A
TIO
N
:P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AVER
AGE
R
E
CTIFIED
FO
RW
ARD

CU
R
R
E
N
T:
I
o
(A
)
A
V
ER
AGE
R
E
CT
IF
IED
F
O
RW
AR
D
C
U
RRE
N
T
:
I
o(
A)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0
0.1
0.2
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0
10
20
30
0
0.05
0.1
0.15
0.2
0.25
0.3
0
25
50
75
100
125
0
0.05
0.1
0.15
0.2
0.25
0.3
0
25
50
75
100
125
DC
D=1/2
Sin(180)
Sin(180)
DC
D=1/2
Sin(180)
DC
D=1/2
T
Tj=125
D=t/T
t
VR
Io
VR=20V
0A
0V
Sin(180)
DC
D=1/2
T
Tj=125
D=t/T
t
VR
Io
VR=20V
0A
0V
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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