RB450F
Diodes
Schottky barrier diode
RB450F
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!
!
!Applications
Low current rectification
!
!
!
!Features
1) Small surface mounting type. (UMD3)
2) Low I
R
. (I
R
=80nA Typ.)
3) High reliability.
!
!
!
!Construction
Silicon epitaxial planar
!
!
!
!Circuit
!
!
!
!External dimensions
(Units : mm)
(All leads have the same dimensions)
2.1
0.1
1.25
0.1
0.1Min.
0~0.1
0.15
0.05
0.3
0.1
2.0
0.2
1.3
0.1
0.65
0.65
0.9
0.1
0.3
0.6
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
3 F
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
45
V
DC reverse voltage
V
R
40
V
Mean rectifying current
I
O
0.1
A
Peak forward surge current
I
FSM
1
A
Junction temperature
125
C
Storage temperature
C
Tj
Tstg
-
40
~
+
125
60Hz for 1
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.45
V
I
F
=
10mA
Reverse current
I
R
-
-
1
A
V
R
=
10V
Capacitance between terminals
-
6.0
-
pF
V
R
=
10V, f
=
1MHz
Note) ESD sensitive product handling required.
C
T
RB450F
Diodes
!
!
!
!Electrical characteristic curves
(Ta = 25
C)
0
1
100m
10m
1m
100
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Ta
=
125
C
75
C
25
C
-
25
C
FORWARD CURRENT : I
F
(
A)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
0
5
10
15
20
25
30
35
10n
100n
1
10
100
1m
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
Ta
=
125
C
75
C
25
C
0
100
2
4
6
8
10
12
14
0
2
5
10
20
50
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig. 3 Capacitance between
terminals characteristics
0
0
20
40
60
80
100
25
50
75
100
125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (
C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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