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Электронный компонент: RB481Y

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RB481Y
Diodes
Rev.B
1/3
Schottky barrier diode
RB481Y

Applications
Low current rectification

Features
1) Ultra Small power mold type.
(EMD4)
2) Low V
F
3) High reliability.


Construction
Silicon epitaxial planar
External dimensions (Unit : mm)











Land size figure (Unit : mm)








Structure


ROHM : EMD4
JEITA : SC-75A Size
dot (year week factory)
0.130.05
0.50.05
00.1
(1)
(2)
(4)
(3)
0.5
0.5
1.00.1
0.220.05
1.60.1
1.
2
0
.
1
1.
6
0
.
1
EMD4
0.5
0.
45
1.0
1.
55
Taping specifications (Unit : mm)




1.650.1
4.00.1
4.00.1
2.00.05
1.50.1
0
3.




Absolute maximum ratings (Ta=25
C)






Electrical characteristics (Ta=25
C)




Symbol
Min.
Typ.
Max.
Unit
V
F
1
-
-
0.28
V
I
F
=1mA
V
F
2
-
-
0.33
V
I
F
=10mA
V
F
3
-
-
0.43
V
I
F
=100mA
I
R
-
-
30
A
V
R
=10V
Conditions
Reverse current
Parameter
orward voltage
F
Symbol
Unit
V
R
V
Io
mA
I
FSM
A
Tj
Tstg
125
-40 to +125
Junction temperature
Storage temperature
(*1) Rating of per diode
Limits
30
100
Parameter
ard current
*1
orward current surge peak
60Hz
1cyc
*1
1
Reverse voltage
Average rectified forw
F
5
0
.
0
5
0
.
2
1.
7
5
0
.
1
8.
0
0.80.1
5.
5
0
.
2
1.
65
0
.
1
0.650.1
0.30.1
0
0
.
1
1PIN
1.
65
0
.
0
1
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RB481Y
Diodes
Rev.B
2/3
Electrical characteristic curves (Ta=25
C)

0.01
0.1
1
10
100
1000
10000
100000
0
10
20
30
Ta=125
Ta=75
Ta=25
Ta=-25
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
(
m
A)
RE
VE
RSE

CU
R
R
E
N
T:
I
R
(
u
A)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
C
I
TANC
E
BETW
EEN
TERM
INALS:
Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP














































FO
RW
ARD

VO
LTAG
E:V
F(
m
V
)
R
E
VE
RSE

CU
RR
E
N
T:
VR
(
u
A)
IR DISPERSION MAP
CA
P
A
C
I
TANC
E
BETW
EEN
TERM
INALS:
Ct(
p
F)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM(
A
)
PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K

S
U
R
G
E
FO
RW
ARD

CU
R
R
E
N
T:
I
F
SM(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:(s)
Rth-t CHARACTERISTICS
THAER
M
AL

I
MPED
ANCE:R
t
h
(
/
W
)
FOR
W
A
R
D

PO
WE
R
D
I
SSIP
A
TIO
N
:Pf
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-P CHARACTERISTICS
RE
VE
RSE

P
O
W
E
R
D
I
SSIP
A
TI
ONP
R
(w)
REVERSE VOLTAGEVR(V)
VR-P
R
CHARACTERISTICS
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
Ta=125
Ta=75
Ta=25
Ta=-25
0
5
10
15
20
25
30
35
40
45
50
Ta=25
VR=10V
n=30pcs
AVE:4.775uA
12
13
14
15
16
AVE:14.33pF
0
5
10
15
20
AVE:5.60A
8.3ms
Ifsm
1cyc
0
5
10
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
1
10
100
t
Ifsm
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=10mA
IF=100mA
300us
time
Mounted on epoxy board
0
0.1
0.2
0.3
0
0.1
0.2
0.3
0.4
0.5
0
0.1
0.2
0.3
0.4
0.5
0
10
20
30
Sin(180)
D=1/2
DC
1
10
100
0
5
10
15
20
f=1MHz
Ta=25
f=1MHz
VR=0V
n=10pcs
Per chip
VF
310
320
330
340
350
360
AVE:340.2mV
Ta=25
IF=100mA
n=30pcs
DC
D=1/2
Sin(180)
Per chip
TR
A
N
S
I
E
N
T
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RB481Y
Diodes
Rev.B
3/3

AMBIENT TEMPERATURETa()
Derating Curve
AV
ERAG
E

R
E
CTI
F
I
E
D
FO
R
W
A
R
D C
U
R
R
E
N
T

I
o
(A
)
AV
ERAG
E

R
E
CTI
F
IED
F
O
RW
ARD

CU
RR
E
N
T

I
o
(
A
)
CASE TEMPARATURETc()
Derating Curve
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
Sin(180)
D=1/2
DC
0
0.1
0.2
0.3
0.4
0.5
0
25
50
75
100
125
Per diode
Per diode
T
Tj=125
D=t/T
t
VR
Io
VR=15V
0A
0V
T
Tj=125
D=t/T
t
VR
Io
VR=15V
0A
0V
Sin(180)
D=1/2
DC
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Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

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