RB495D
Diodes
Schottky barrier diode
RB495D
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!Applications
Low current rectification
!
!
!
!Features
1) Small surface mounting type. (SMD3)
2) Two diodes with common cathode for excellent
installation efficiency.
3) High reliability.
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!Construction
Silicon epitaxial planar
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!External dimensions
(Units : mm)
0.95 0.95
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(All leads have same dimensions)
D 3 Q
2.8
0.2
2.9
0.2
1.9
0.2
0.8
0.1
0.4
+
0.1
-
0.05
1.1
+
0.2
-
0.1
0.15
+
0.1
-
0.06
1.6
+
0.2
-
0.1
0.3
~
0.6
0
~
0.1
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!Circuit
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!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
V
DC reverse voltege
V
R
V
I
O
A
I
FSM
A
Junction temperature
125
C
Storage temperature
C
Operating temperture
40
25
0.4
2
C
Mean rectifying current
1
1
Mean output current per element : I
O
/ 2
2
60Hz for 1
Tj
Tstg
Topr
Peak forward surge current
2
-
40
~
+
125
-
30
~
+
85
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
-
0.30
V
I
F
=
10mA
-
0.50
V
I
F
=
200mA
Reverse current
I
R
-
-
-
-
70
A
V
R
=
25V
Note) ESD sensiteve product handling required.
V
F1
V
F2
RB495D
Diodes
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!Electrical characteristic curves
(Ta = 25
C)
0
100
1m
10m
100m
1
FORWARD
CURRENT : I
F
(A)
FORWARD VOLTAGE : V
F
(V)
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Ta
=
125
C
75
C
25
C
-
40
C
Fig.1 Forward characteristics
0
10
100
1m
10m
100m
10
20
30
40
REVERSE VOLTAGE : V
R
(V)
REVERSE
CURRENT : I
R
(A)
1
Ta
=
125
C
75
C
25
C
0
C
Fig.2 Reverse characteristics
0
10
20
30
100
10
1
5
15
25
35
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(pF)
Fig.3 Capacitance between
terminals characteristics
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