RB501V-40
Diodes
Schottky barrier diode
RB501V-40
!
!
!
!Applications
Low current rectification
!
!
!
!Features
1) Small surface mounting type. (UMD2)
2) Low V
F
. (V
F
=0.43V Typ. at 100mA)
3) High reliability.
!
!
!
!Construction
Silicon epitaxial planar
!
!
!
!External dimensions
(Units : mm)
There are two different markings.
2.5
0.2
1.7
0.1
1.25
0.1
CATHODE MARK
-
0.1
+
0.2
0.7
+
0.1
-
0.05
0.1
0.3
0.05
4
2.5
0.2
1.7
0.1
1.25
0.1
CATHODE MARK
-
0.1
+
0.2
0.7
+
0.1
-
0.05
0.1
0.3
0.05
4
ROHM : UMD2
EIAJ : SC-76
JEDEC : SOD-323
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
V
DC reverse voltage
V
R
V
Mean rectifying current
I
O
0.1
A
Peak forward surge current
I
FSM
1
A
Junction temperature
125
C
Storage temperature
C
45
40
-
40
~
+
125
Tj
Tstg
60 Hz for 1
!
!
!
!Electrical characteristics
(Ta = 25
C)
Note) ESD sensitive product handling required.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F1
-
0.55
V
I
F
=
100mA
Forward voltage
V
F2
-
0.34
V
I
F
=
10mA
Reverse current
I
R
-
30
A
V
R
=
10V
Capacitance between terminals
-
6.0
-
pF
V
R
=
10V, f
=
1MHz
C
T
-
-
-
RB501V-40
Diodes
!
!
!
!Electrical characteristic curves
(Ta = 25
C)
0
1000
FORWARD CURRENT : I
F
(
mA)
1
10
100
FORWARD VOLTAGE : V
F
(V)
0.1
0.2
0.3
0.4
0.5
0.6
Fig. 1 Forward characteristics
125
C
-
25
C
75
C
25
C
0
REVERSE CURRENT : R (A)
REVERSE VOLTAGE : V
R
(V)
40
10
20
30
0.1
10m
1m
100
10
1
Fig. 2 Reverse characteristics
125
C
75
C
25
C
0
10
1
100
5
10
15
20
25
30
35
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
REVERSE VOLTAGE : V
R
(V)
Fig. 3 Capacitance between
terminals characteristics
0
0
20
40
60
80
100
25
50
75
100
125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (
C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
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