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Электронный компонент: RB530XN

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RB530XN
Diodes
Rev.B 1/3
Schottky barrier diode
RB530XN

Applications
External dimensions (Unit : mm)
Land size figure (Unit : mm)
Low current rectification
UMD6
0.35
0.
9
1.
6
0.65
0.65
Sym bol
Min.
Typ.
Max.
Unit
Conditions
V
F
1
-
-
0.40
V
I
F
=10m A
V
F
2
-
-
0.53
V
I
F
=100m A
Revers e current
I
R
-
-
1
A
V
R
=10V
orward voltage
Param eter
F
Sym bol
Unit
V
R
V
Io
m A
I
FSM
A
Tj
Ts tg
Lim its
30
100
Param eter
Revers e vltage
verage rectified forward current
*1
orward current s urge peak
60Hz
1cyc
*1
1
unction tem perature
torage tem perature
*1) Rating of per diode
125
-40 to +125
A
F
J
S
(

Features
1) Small mold type. (UMD6)
2) Low I
R
3) High reliability.


Construction
Structure
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
dot (year week factory)
2.00.2
2
.1
0.1
1.25
0
.
1
0.25
0.1
0.05
(5)
(6)
(4)
1.30.1
0.65
0.65
(1)
(3)
(2)
0.150.05
0.90.1
0.7
0.
1Min
00.1
Each lead has same dimension
Silicon epitaxial planar



Taping dimensions (Unit : mm)
2.20.1
4.00.1
4.00.1
2.00.05
1.50.1
0
3.
5
0.
0
5
1.
75
0
.
1
8.
0
0.
2
1.10.1
2.
45
0
.
1
2.
4
0.
1
5.
5
0.
2
1.150.1
2.
4
0.
1
0.30.1
0
0
.
5










Absolute maximum ratings (Ta=25
C)







Electrical characteristics (Ta=25
C, per chip)




RB530XN
Diodes
Rev.B 2/3

0
100
200
300
400
500
600
700
800
900
1000
1
10
100
0
10
20
3
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FO
R
W
A
R
D

C
U
RRE
N
T
:IF(
m
A
)
REV
E
RSE

C
U
R
R
E
N
T
:
I
R(
n
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
EEN
T
E
R
M
IN
AL
S:
Ct(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
F
O
RW
A
R
D

V
O
L
T
AG
E
:
VF
(
m
V)
R
E
V
E
RS
E

C
U
RR
E
N
T
:
IR
(
n
A
)
IR DISPERSION MAP
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
EEN
TE
R
M
I
N
A
L
S
:
C
t
(
p
F)
Ct DISPERSION MAP
Electrical characteristic curves (Ta=25
C)
0
0
10
20
30
40
50
AVE:28.2pF
Ta=25
f=1MHz
VR=0V
n=10pcs
IFSM DISRESION MAP
PE
A
K
S
UR
GE
FO
RW
A
R
D

C
U
RR
E
N
T:I
F
S
M
(A
)
PE
A
K
S
U
R
GE
F
O
R
W
ARD

CU
RR
E
N
T:
IF
SM
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K
S
U
R
GE
F
O
R
W
ARD

CU
RR
E
N
T:
IF
SM
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
0
5
10
15
20
AVE:5.60A
0
5
10
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
5
10
1
10
100
t
Ifsm
0.001
0.01
0.1
1
10
100
1000
0
100
200
300
400
500
600
TIME:t(s)
Rth-t CHARACTERISTICS
TR
AN
S
I
EN
T
T
H
AE
R
M
AL

I
M
P
ED
A
N
C
E
:
R
t
h

(
/
W
)
FO
R
W
A
R
D PO
WE
R
D
I
S
S
IPA
T
IO
N
:
P
f
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS
RE
V
E
RS
E

P
O
W
E
R
D
I
S
SIP
A
T
IO
N
:
P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
1
10
100
1000
10000
100000
1000000
0
10
20
30
f=1MH
0
0.002
0.004
0.006
0.008
0.01
0
10
20
3
Per chip
DC
D=1/2
Sin(180)
1
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board
400
410
420
430
440
450
AVE:430.7mV
0
0.1
0.2
0.3
0
0.1
0.2
0.3
0.4
0.5
Per chip
Sin(180)
D=1/2
DC
Ta=125
Ta=75
Ta=-25
Ta=25
Ta=125
Ta=75
Ta=25
Ta=-25
Ta=25
IF=100mA
n=10pcs
Ta=25
VR=10V
n=30pcs
AVE:114nA
8.3ms
Ifsm
1cyc
0
RB530XN
Diodes
Rev.B 3/3

AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AV
ERAG
E

R
E
CTIF
IE
D
FO
RW
A
R
D

C
U
R
R
E
N
T:I
o
(
A
)
AV
ER
A
G
E
R
E
CT
I
F
I
E
D
F
O
RW
ARD

CU
RR
E
N
T:
Io
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
0.1
0.2
0.3
0
25
50
75
100
125
Per chip
Sin(180)
D=1/2
DC
T
Tj=125
D=t/T
t
VR
Io
VR=15V
0A
0V
0
0.1
0.2
0.3
0
25
50
75
100
125
Per chip
Sin(180)
D=1/2
DC
T
Tj=125
D=t/T
t
VR
Io
VR=15V
0A
0V
Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.