RB705D
Diodes
Schottky barrier diode
RB705D
Applications
General purpose detection
High speed switching
Features
1) Small surface mounting type. (SMD3)
2) Low reverse current and low forward voltage.
3) Multiple diodes with common cathode configuration.
Construction
Silicon epitaxial planar
Circuit
External dimensions (Units : mm)
2.8
0.2
1.6
0.3
~
0.6
0.15
0.4
0~0.1
1.1
0.8
0.1
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
+
0.2
-
0.1
+
0.1
-
0.06
+
0.1
-
0.05
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
(All leads have the same dimensions)
D 3 H
Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
Limits
Unit
Peak reverse voltage
V
RM
V
DC reverse voltage
V
R
V
Mean rectifying current
I
O
Peak forward surge current
I
FSM
Junction temperature
Tj
125
C
Storage temperature
Tstg
C
40
40
30
200
mA
mA
-
40
~
+
125
60 Hz for 1
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
0.37
V
I
F
=
1mA
Reverse current
I
R
-
-
1
A
V
R
=
10V
Capacitance between terminals
-
2.0
-
pF
V
R
=
1V, f
=
1MHz
Note) ESD sensitive product handling required.
C
T
RB705D
Diodes
Electrical characteristic curves (Ta = 25
C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1m
10m
100m
1
FORWARD CURRENT : I
F
(
A)
FORWARD VOLTAGE : V
F
(V)
100
10
1
Fig. 1 Forward characteristics
Ta
=
75
C
Ta
=
25
C
Ta
=-
25
C
Ta
=
125
C
pulse measurement
Typ.
0
5
10
15
20
25
30
35
100
10
1
100n
10n
1n
REVERSE CURRENT : I
R
(
A)
REVERSE VOLTAGE : V
R
(V)
Fig. 2 Reverse characteristics
Ta
=
75
C
Ta
=
25
C
Ta
=
125
C
Ta
=-
25
C
0
5
10
15
20
25
0.1
1
10
100
REVERSE VOLTAGE : V
R
(V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
0
0.1
0.2
0.5
1
2
5
10
4
8
12
16
20
24
28
REVERSE RECOVERY TIME : t
rr
(
ns)
FORWARD CURRENT : I
F
(mA)
Fig. 4 Reverse recovery time
characteristics
0
0
20
40
60
80
100
25
50
75
100
125
Io CURRENT (%)
AMBIENT TEMPERATURE : Ta (
C)
Fig. 5 Derating curve
(mounting on glass epoxy PCBs)
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