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Электронный компонент: RB715F

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RB715F
Diodes
Rev.B
1/3
Shottky barrier diode
RB715F

Application External dimensions (Unit : mm) Lead size figure (Unit : mm)
Low current rectification
Features
1) Small mold type. (UMD3)
2) Low V
F
3) High reliability.


Construction
Structure
JEITA : SC-70
JEDEC : SOT-323
dot (year week factory)
ROHM : UMD3
2.00.2
2
.1
0
.
1
1.
25
0
.
1
0.30.1
(3)
1.30.1
0.65
0.65
(2)
(1)
0.150.05
0.90.1
0.70.1
0.
1Min
00.1
Each lead has same dimension
UMD3
0.
9M
IN
.
0.8MIN.
1.
6
0.65
1.3
Silicon epitaxial planer



Taping dimensions (Unit : mm)
4.00.1
4.00.1
2.00.05
1.550.05
3.
5
0.
0
5
1.
7
5
0
.
1
8.
0
0.
2
0.50.05
2.
4
0.
1
2.250.1
0
5.
5
0.
2
1.250.1
2.
4
0.
1
0.30.1
0
0.
1
Absolute maximum ratings (Ta=25
C)








Symbol
Unit
V
RM
V
V
R
V
Io
mA
I
FSM
mA
Tj
Tstg
Electrical characteristics (Ta=25
C)





Storage temperature
-40 to +125
*1)Rating of per diode
ward current surge peak (60Hz
1cyc) (*1)
200
ion temperature
125
everse voltage (DC)
40
verage rectified forward current
30
Parameter
Limits
everse voltage (repetitive peak)
40
R
R
A
For
Junct
(
Symbol
Min.
Typ.
Max.
Unit
V
F
-
-
0.37
V
IF=1mA
I
R
-
-
1
A
VR=10V
Ct
-
2.0
-
pF
VR=1V f=1MHz
Conditions
Capacitance between terminals
ent
Parameter
orward voltage
F
Reverse curr
background image
RB715F
Diodes
Rev.B
2/3
Electrical characteristic curves (Ta=25
C)
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
(
m
A)
RE
VE
RSE

CU
R
R
E
N
T:
I
R
(
u
A)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
CA
P
A
CITA
NCE
BE
T
W
EEN
TERM
INALS:
Ct(
p
F)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
FOR
W
AR
D

V
O
LT
AG
E:VF(
m
V)
RE
VE
RS
E

CUR
R
E
N
T:
I
R
(nA)
IR DISPERSION MAP
C
A
PACIT
A
NCE
BETWEEN
TERM
INAL
S:Ct(
p
F
)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK S
UR
GE
FOR
W
AR
D

C
U
RR
EN
T
:
I
F
SM
(
A
)
PEAK S
UR
GE
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
SM
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK S
UR
GE
FOR
W
A
R
D

CU
RR
E
N
T:
I
F
SM
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TR
ANSIENT
THAERM
AL
I
MPEDA
N
CE:R
t
h
(
/
W
)
FO
R
W
A
R
D

PO
WER
D
I
SSI
PAT
I
ON:
P
f
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
RE
V
E
R
S
E

P
O
W
E
R
D
I
SSI
PAT
I
ON:
P
R
(W
)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0
100 200 300 400 500 600 700 800 900 1000
Ta=125
Ta=75
Ta=25
Ta=-25
0.001
0.01
0.1
1
10
100
1000
0
10
20
30
Ta=125
Ta=75
Ta=25
Ta=-25
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm
1cyc
0
5
10
15
20
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1
10
100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00
0.01
0.02
0.03
0.04
0.05
Sin(180)
D=1/2
DC
0
0.001
0.002
0.003
0
10
20
Sin(180)
DC
D=1/2
0.1
1
10
0
5
10
15
20
25
30
35
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25
IF=1mA
n=30pcs
1
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
AVE:0.083nA
Ta=25
VR=10V
n=30pcs
0
1
2
3
4
5
6
7
8
9
10
AVE:1.97pF
Ta=25
f=1MHz
VR=1V
n=10pcs
30
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RB715F
Diodes
Rev.B
3/3







FO
AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
A
V
E
R
A
G
E

R
EC
T
I
F
I
ED
RW
A
R
D

C
U
RRE
N
T
:
I
o(
A
)
AV
ER
A
G
E
RE
C
T
I
F
I
E
D
FO
RW
A
R
D

C
U
RRE
N
T
:I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
02
0.04
0.06
0.08
0.1
0
25
50
75
100
125
Sin(180)
D=1/2
DC
0.00
0.02
0.04
0.06
0.08
0.10
0
25
50
75
100
125
Sin(180)
D=1/2
DC
T
Tj=125
D=t/T
t
VR
Io
VR=20V
0A
0V
T
Tj=125
D=t/T
t
VR
Io
VR=20V
0A
0V
0.
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Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

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