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Электронный компонент: RB731XN

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RB731XN
Diodes
Rev.B 1/3
Schottky barrier diode
RB731XN

Applications
General rectification
Features
1) Small power mold type.
(UMD6)
2) Low V
F
3) High reliability






External dimensions (Unit : mm)












Land size figure
ROHM : UMD6
JEITA : SC-88
JEDEC : SOT-363
dot (year week factory)
2.00.2
2.1
0.1
1.25
0.1
0.25
0.1
0.05
(5)
(6)
(4)
1.30.1
0.65
0.65
(1)
(3)
(2)
0.150.05
0.90.1
0.7
0.
1Min
00.1
Each lead has same dimension
UMD6
0.35
0.
9
1.
6
0.65
0.65








Structure


Taping dimensions (Unit : mm)
2.20.1
4.00.1
4.00.1
2.00.05
1.50.1
0
3
.
5
0.
0
5
1.
7
5
0
.
1
8.
0
0.
2
1.10.1
2.
4
5
0
.
1
2
.
4
0.
1
5
.
5
0.
2
1.150.1
2
.
4
0.
1
0.30.1
0
0
.
5









Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
RM
Limits
40
Unit
V
I
O
30
mA
V
I
FSM
200
mA
Tj
125
C
Tstg
-
40 to
+
125
C
Rating for each diode Io/3
V
R
40
Reverse voltage (repetitive peak)
Average rectified forward current
Forward current surge peak (60Hz 1cyc.)
Junction temperature
Storage temperature
Reverse voltage (DC)
Electrical characteristic (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Forward voltage
V
F
-
-
-
0.37
V
I
F
=1mA
Reverse current
I
R
-
1
A
V
R
=10V
2
Capacitance between terminal
Ct
-
-
pF
V
R
=1V, f=1MHz
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RB731XN
Diodes
Rev.B 2/3
FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS
F
O
R
W
A
R
D

C
U
RRE
N
T
:IF(
m
A
)
R
E
VE
RSE

CU
RR
E
N
T:
IR
(
u
A
)
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS
C
A
P
A
C
I
T
A
N
C
E
B
E
T
W
EEN
TE
RM
INA
L
S
:
C
t
(
p
F
)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DIPERSION MAP
F
O
R
W
A
R
D

V
O
L
T
AG
E:
VF
(
m
V)
RE
V
E
R
S
E

C
U
RRE
N
T
:IR(n
A
)
IR DISPERSION MAP
CA
P
A
C
I
T
A
N
C
E

B
E
T
W
EE
N
TE
RM
INA
L
S
:
C
t
(
p
F
)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PE
AK S
U
R
G
E
FO
RW
A
R
D

C
U
RR
E
N
T:IFS
M
(A
)
PE
A
K
S
UR
GE
FO
RW
A
R
D
C
U
RR
E
N
T:I
F
S
M
(
A
)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PE
A
K
S
UR
GE
FO
RW
A
R
D
C
U
RR
E
N
T:I
F
S
M
(
A
)
TIME:t(ms)
IFSM-t CHARACTERISTICS
FO
RW
A
R
D
P
O
W
E
R
D
I
S
SIP
A
T
IO
N
:
P
f
(
W
)
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
RE
VE
R
S
E
P
O
W
E
R
D
I
S
S
IPA
T
IO
N
:
P
R
(W)
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
0.01
0.1
1
10
100
0
100 200 300 400 500 600 700 800 900 1000
Ta=125
Ta=75
Ta=25
Ta=-25
0.001
0.01
0.1
1
10
100
1000
0
10
20
30
Ta=125
Ta=75
Ta=25
Ta=-25
0
1
2
3
4
5
6
7
8
9
10
AVE:2.52pF
Ta=25
f=1MHz
VR=0V
n=10pcs
0
5
10
15
20
AVE:7.30A
8.3ms
Ifsm
1cyc
0
5
10
15
20
1
10
100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
1
10
100
t
Ifsm
0.00
0.01
0.02
0.03
0.04
0.00
0.01
0.02
0.03
0.04
0.05
Sin(180)
D=1/2
DC
0
0.001
0.002
0.003
0
10
20
30
Sin(180)
DC
0.1
1
10
0
5
10
15
20
25
30
35
f=1MHz
250
260
270
280
290
300
AVE:267.4mV
Ta=25
IF=1mA
n=30pcs
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Electrical characteristic curves












AVE:0.083nA
Ta=25
VR=10V
n=30pcs
TIME:t(s)
Rth-t CHARACTERISTICS
TR
A
N
S
I
E
N
T
TH
AE
R
M
AL

I
M
P
E
D
AN
CE
:
R
th

(
/
W
)
1
10
100
1000
0.001
0.1
10
1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA
IF=10mA
300us
time
Mounted on epoxy board



































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RB731XN
Diodes
Rev.B 3/3



A
)




FO


AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)
AV
ER
A
G
E
R
E
C
T
I
F
I
E
D
R
W
A
R
D

C
U
R
R
E
N
T:I
o
(
AV
ER
AG
E
R
E
CT
I
F
I
E
D
FO
R
W
A
R
D

C
U
RRE
N
T
:
I
o
(
A
)
CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)
0
0.02
0.04
0.06
0.08
0.1
0
25
50
75
100
125
Per chip
DC
Sin(180)
D=1/2
0
0.02
0.04
0.06
0.08
0.1
0
25
50
75
100
125
Per chip
DC
Sin(180)
D=1/2
T
Tj=125
D=t/T
t
VR
Io
VR=15V
0A
0V
T
Tj=125
D=t/T
t
VR
Io
VR=15V
0A
0V
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Appendix
Appendix1-Rev1.1


The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

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