RLD78MA-E
Laser diodes
1/3
AlGaAs laser diodes
RLD78MA-E
The RLD-78MA-E is world's first mass-produced laser diodes that is manufactured by molecular beam epitaxy. The
signal-to-noise ratio is stable in comparison to conventional manufacturing techniques.
This device is ideal for use in compact disc players.
!
!
!
!
Applications
Compact disc players
!
!
!
!
Features
1) Signal-to-noise ratio guaranteed over entire operating
temperature range.
2) Reduced facet reflection.
3) One-third the dispersion compared with conventional
laser diodes.
4) High-precision, compact package.
!
!
!
!
External dimensions (Units : mm)
2.3
+
0
1.0Min.
3.6
4.4
+
0
1.0
0.1
0.4
0.1
(1.27)
1.20.1
6.50.5
3
-
0.45
(2)
(1)
(3)
-
0.025
5.6
90
2
Glass window
Chip
L.D.
P.D.
(1)
(2)
(3)
M
t
y
p
e
!
!
!
!
Absolute maximum ratings (Tc=25
C)
C
C
V
V
mW
Unit
Limits
5
2
30
-
10~
+
60
-
40~
+
85
Symbol
P
O
V
R
V
R (PIN)
Topr
Tstg
Parameter
Output
Laser
PIN photodiode
Operating temperature
Storage temperature
Reverse
voltage
RLD78MA-E
Laser diodes
2/3
!
!
!
!
Electrical and optical characteristics (Tc=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
I
th
mA
-
35
60
-
I
op
mA
-
45
70
P
O
=
3mW
I
m
mA
0.1
0.2
0.6
//
deg
8
11
15
deg
20
37
45
P
O
=
3mW
//
deg
-
-
2
nm
770
785
810
P
O
=
3mW
S/N
dB
60
-
-
f
=
720kHz,
f
=
10kHz
deg
-
-
3
Y
Z
X
m
-
-
80
-
V
op
V
-
1.9
2.3
mW/mA
0.1
0.25
0.6
P
O
=
3mW
I(3mW)
-
I(1mW)
2mW
P
O
=
3mW, V
R(PIN)
=
15V
Parallel deviation angle
Parallel divergence angle
Perpendicular deviation angle
Emission point accuracy
Peak emission wavelength
Perpendicular divergence angle
Monitor current
Differential efficiency
Operating voltage
Operating current
Threshold current
Signal-to-noise ratio
//
and
are defined as the angle within which the intensity is 50% of the peak value.
!
!
!
!
Electrical and optical characteristic curves
OPTICAL POWER : P
O
(mW)
OPERATING CURRENT : I
F
(mA)
10
0
1
2
3
4
5
20
30
40
50
60
70
80
60
C
40
C
25
C
10
C
0
C
-
10
C
Fig.1 Optical output vs.operating current
THRESHOLD CURRENT : I
th
(mA)
PACKAGE TEMPERATURE : T
C
(
C)
-
10
0
10
-
20
20
30
40
50
60
70
10
100
90
80
70
60
50
40
30
20
Fig.2 Dependence of threshold
current on temperature
1.0
0.5
0
-
40
0
40
RELA
TIVE OPTICAL INTENSITY
ANGLE (
deg) d
direction
//
direction
Fig.3 Far field pattern
WAVELENGTH :
(
nm)
PACKAGE TEMPERATURE : Tc
(
C)
-
10
-
20
790
780
770
760
800
0
10
20
30
40
50
60
Fig.4 Dependence of wavelength
on temperature
RELATIVE OPTICAL INTENSITY
WAVELENGTH :
(nm)
785
795
790
800
805
T
C
=25
C
P
O
=5mW
P
O
=3mW
P
O
=1mW
Fig.5 Dependence of emission
spectrum on optical output
OPTICAL INTENSITY : P
O
(mW)
MONITOR CURRENT : I
m
(mA)
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
Fig.6 Monitor current vs.optical output
RLD78MA-E
Laser diodes
3/3
f=720kHz
f=10kHz
P
O
=3mW
20
60
50
40
30
10
-14
2
5
2
5
2
5
10
-13
10
-12
10
-11
100
90
80
70
S/N (dB)
RELATIVE OPTICAL TO NOISE RATIO : RIN (Hz
-1
)
TEMPERATURE
(
C)
Fig.7 Temperature dependence of noise
S/N (dB)
10
0
0.01
0.1
1
10
-14
10
-13
10
-12
10
-11
10
-10
100
90
80
70
60
f=720kHz
f=10kHz
T=25
C
P
O
=3mW
RELATIVE OPTICAL TO NOISE RATIO : RIN (Hz
-1
)
OPTICAL FEEDBACK
(%)
Fig.8 Dependence of noise on
optical feedback
PDF 
ZIP