RSS140N03
Transistor
1/3
Switching (30V, 14A)
RSS140N03
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (SOP8).
Applications
Power switching, DC/DC converter.
External dimensions (Unit : mm)
Each lead has same dimensions
SOP8
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
5.0
0.2
0.2
0.1
6.0
0.3
3.9
0.15
0.5
0.1
(1
)
(4
)
(8
)
(5
)
Max.1.75
1.27
0.15
0.4
0.1
1.5
0.1
0.1
Structure
Silicon N-channel MOS FET
Equivalent circuit
A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
1 ESD PROTECTION DIODE
2 BODY DIODE
2
1
(8)
(7)
(6)
(5)
(1)
(2)
(3)
(4)
(1) (2) (3) (4)
(8) (7) (6) (5)
Absolute maximum ratings (Ta=25
C)
1
1
2
Parameter
V
V
DSS
Symbol
30
V
V
GSS
20
A
I
D
14
A
I
DP
56
A
I
S
1.6
A
I
SP
6.4
W
P
D
2
C
Tch
150
C
Tstg
-
55 to
+
150
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipatino
Channel temperature
Strage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
1 Pw
10
s, Duty cycle
1%
2 Mounted on a ceramic board.
RSS140N03
Transistor
2/3
Thermal resistance (Ta=25
C)
C / W
Rth (ch-a)
62.5
Parameter
Symbol
Limits
Unit
Channel to ambient
Mounted on a ceramic board.
Electrical characteristics (Ta=25
C)
Parameter
Symbol
I
GSS
Y
fs
Min.
-
-
10
A
V
GS
=20V, V
DS
=0V
V
DD
15V
Typ.
Max.
Unit
Conditions
Gate-source leakage
V
(BR) DSS
30
-
-
V
I
D
=1mA, V
GS
=0V
Drain-source breakdown voltage
I
DSS
-
-
10
A
V
DS
=30V, V
GS
=0V
Zero gate voltage drain current
V
GS (th)
1.0
-
2.5
V
V
DS
=10V, I
D
=1mA
Gate threshold voltage
-
Static drain-source on-starte
resistance
R
DS (on)
-
m
Forward transfer admittance
-
Input capacitance
-
-
S
Output capacitance
C
iss
-
-
pF
V
DS
=10V
Reverse transfer capacitance
C
oss
-
-
pF
V
GS
=0V
Tum-on delay time
C
rss
-
-
pF
f=1MHz
V
GS
=10V
R
GS
=10
Rise time
t
d (on)
-
-
ns
Tum-off delay time
t
r
-
-
ns
Fall time
t
d (off)
-
-
ns
Total gate charge
t
f
-
-
ns
Gate-source
charge
Q
g
-
-
nC
Gate-drain
charge
Q
gs
-
-
nC
V
GS
=5V
Q
gd
-
-
nC
Pulsed
4.9
6.7
I
D
=
14A, V
GS
=10V
6.0
8.4
I
D
=
14A, V
GS
=4.5V
6.5
9.0
I
D
=
14A, V
GS
=4V
13
I
D
=
14A, V
DS
=10V
3150
830
500
16
R
L
=2.14
52
125
78
37
6.2
13.5
I
D
=
14A
I
D
=7A, V
DD
15V
Body diode characteristics (Source-Drain Characteristics) (Ta=25
C)
Forward voltage
V
SD
-
-
1.2
V
I
S
=6.4A, V
GS
=0V
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Pulsed
Electrical characteristic curves
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
100
CAPACITANCE : C
(pF)
10000
1000
Ta
=
25
C
f
=
1MHz
V
GS
=
0V
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t
(ns)
1000
10000
100
Ta
=
25
C
V
DD
=
15V
V
GS
=
10V
R
G
=
10
Pulsed
Fig.2 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
0
5
10
15
20
25
30
35
40
TOTAL GATE CHARGE : Qg (nC)
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE : V
GS
(V)
Ta
=
25
C
V
DD
=
15V
I
D
=
14A
R
G
=
10
Pulsed
Fig.3 Dynamic Input Characteristics
RSS140N03
Transistor
3/3
0.0
0.5
1.0
1.5
2.0
2.5
3.0
GATE-SOURCE VOLTAGE : V
GS
(V)
100
10
1
0.1
0.01
0.001
DRAIN CURRENT : I
D
(A)
Fig.4 Typical Transfer Characteristics
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
DS
=
10V
Pulsed
0
2
4
6
8
10
12
GATE-SOURCE VOLTAGE : V
GS
(V)
0
10
20
30
40
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta
=
25
C
Pulsed
I
D
=
14A
I
D
=
7A
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
100
SOURCE CURRENT : I
s
(A)
Fig.6 Source Current vs.
Source-Drain Voltage
V
GS
=
0V
Pulsed
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
1
100
10
0.1
1
10
100
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
10V
Pulsed
1
100
10
0.1
1
10
100
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
DRAIN CURRENT : I
D
(A)
V
GS
=
4.5V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
1
100
10
0.1
1
10
100
Ta
= -
25
C
Ta
=
25
C
Ta
=
75
C
Ta
=
125
C
V
GS
=
4V
Pulsed
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(m
)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (
)
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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