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Электронный компонент: SST2222A

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UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!Features
1) BV
CEO
> 40V (I
C
=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
!Package, marking, and packaging specifications
Part No.
UMT2222A
UMT3
R1P
T106
3000
SST2222A
SST3
R1P
T116
3000
MMST2222A
SMT3
R1P
T146
3000
PN2222A
TO-92
-
T93
3000
Packaging type
Marking
Code
Basic ordering unit
(pieces)
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
75
40
6
0.6
0.35
150
-
55
+
150
Unit
V
V
V
A
W
W
W
P
C
0.2
0.625
SST2222A
UMT2222A,SST2222A,
MMST2222A
PN2222A
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
When mounted on a 7 x 5 x 0.6 mm ceramic board
!External dimensions
(Units : mm)
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
UMT2222A
SST2222A
MMST2222A
PN2222A
0
0.1
0.2Min.
2.4
0.2
1.3
0.95
0.45
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
0
0.1
2.8
0.2
1.6
0.3
0.6
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
0
0.1
(2)
(1)
(3)
0.1
0.4
2.1
0.1
1.25
0.1
0.9
0.1
0.2
0.7
0.1
0.15
0.05
0.3
2.0
0.2
1.3
0.1
0.65 0.65
+
0.1
-
0
4.8
0.2
(12.7Min.)
2.5Min.
4.8
0.2
3.7
0.2
5
0.45
2.3
0.5
0.1
-
0.05
+
0.15
2.5
+
0.3
-
0.1
(1)
(2)
(3)
All terminals have same dimensions
All terminals have same dimensions
All terminals have same dimensions
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
75
40
6
-
-
-
-
-
-
-
-
-
-
100
100
V
V
V
nA
nA
I
C
=
10
A
I
C
=
10mA
I
E
=
10
A
V
CB
=
60V
V
EB
=
3V
-
-
2
V
BE(sat)
0.6
-
1.2
V
-
-
1
I
C
/I
B
=
500mA/50mA
V
CE(sat)
-
-
0.3
V
I
C
/I
B
=
150mA/15mA
I
C
/I
B
=
500mA/50mA
I
C
/I
B
=
150mA/15mA
40
-
-
50
-
-
-
h
FE
75
-
-
50
-
-
35
-
-
V
CE
=
10V , I
C
=
0.1mA
V
CE
=
10V , I
C
=
1mA
V
CE
=
10V , I
C
=
10mA
V
CE
=
1V , I
C
=
150mA
100
-
300
V
CE
=
10V , I
C
=
150mA
V
CE
=
10V , I
C
=
500mA
f
T
Cob
300
-
-
-
-
8
MHz
pF
V
CE
=
20V , I
C
=-
20mA, f
=
100MHz
V
CB
=
10V , f
=
100kHz
Cib
-
-
25
pF
V
EB
=
0.5V , f
=
100kHz
td
-
-
10
ns
V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
V
CC
=
30V , V
BE(OFF)
=
0.5V , I
C
=
150mA , I
B1
=
15mA
tr
-
-
25
ns
tstg
-
-
225
ns
V
CC
=
30V , I
C
=
150mA , I
B1
=-
I
B2
=
15mA
V
CC
=
30V , I
C
=
150mA , I
B1
=-
I
B2
=
15mA
tf
-
-
60
ns
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
!Electrical characteristic curves
0
50
100
10
0
5
I
B
=0
A
100
200
400
500
600
300
Ta=25
C
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CE
=
10V
1V
Fig.3 DC current gain vs. collector current(
)
1.0
10
100
1000
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
I
C
/ I
B
=
10
Fig.2 Collector-emitter saturation
voltage vs. collector current
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(
mA)
Ta
=
125
C
V
CE
=
10V
25
C
-
55
C
Fig.4 DC current gain vs. collector current(
)
0.1
10
1.0
100
1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(
mA)
Ta
=
25
C
V
CE
=
10V
f
=
1kHz
Fig.5 AC current gain vs. collector current
1.0
10
100
1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
I
C
/ I
B
=
10
Fig.6 Base-emitter saturation
voltage vs. collector current
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CE
=
10V
Fig.7 Grounded emitter propagation
characteristics
1.0
10
100
1000
100
1000
10
TURN ON TIME : ton
(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
I
C
/ I
B
=
10
V
CC
=
30V
10V
Fig.8 Turn-on time vs. collector
current
1.0
10
100
1000
100
500
5
10
RISE TIME : tr
(ns)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
V
CC
=
30V
I
C
/ I
B
=
10
Fig.9 Rise time vs. collector
current
1.0
10
100
1000
100
1000
10
STORAGE TIME : Ts
(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.10 Storage time vs. collector
current
1.0
10
100
1000
100
1000
10
FALL TIME : tf(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.11 Fall time vs. collector
current
0.1
1.0
10
100
10
100
1
CAPACITANCE
(pF)
REVERSE BIAS VOLTAGE(V)
Ta
=
25
C
f
=
1MHz
Cib
Cob
Fig.12 Input / output capacitance
vs. voltage
1
10
100
1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
100MHz
200MHz
250MHz 300MHz
250MHz
Fig.13 Gain bandwidth product
1.0
10
100
1000
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
V
CE
=
10V
Fig.14 Gain bandwidth product
vs. collector current