SSTA56 / MMSTA56 / MPSA56
Transistors
PNP General Purpose Transistor
SSTA56 / MMSTA56 / MPSA56
!Features
1) BV
CEO
< -40V (I
C
=
-1mA)
2) Complements the SSTA06 / MMSTA06 / MPSA06.
!Package, marking and packaging specifications
Part No.
SSTA56
SST3
R2G
T116
3000
MMSTA56
SMT3
R2G
T146
3000
MPSA56
TO-92
-
T93
3000
Packaging type
Marking
Code
Basic ordering unit (pieces)
!Absolute maximum ratings
(Ta = 25
C)
SSTA56, MMSTA56
MPSA56
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
-
80
-
80
-
4
-
0.5
0.625
150
-
55~+150
Unit
V
V
V
A
P
C
0.2
W
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
!External dimensions
(Units : mm)
SSTA56
MMSTA56
MPSA56
ROHM : SST3
ROHM : SMT3
EIAJ : SC-59
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.2Min.
2.4
0.2
1.3
0.95
0.450.1
0.15
0.4
2.90.2
1.90.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0~0.1
2.8
0.2
1.6
0.3
~
0.6
1.1
0.80.1
0.15
0.4
2.90.2
1.90.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
4.8
0.2
(12.7Min.)
2.5Min.
4.80.2
3.70.2
5
0.45
2.3
0.50.1
0.1
2.5 +0.3
-
0.1
(1)
(2)
(3)
All terminals have same dimensions
All terminals have same dimensions
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
I
CBO
I
CEO
-
4
-
80
-
-
-
-
-
-
-
-
-
0.1
-
1
V
V
A
I
C
=
-
100
A
I
C
=
-
1mA
V
CB
=
-
80V
V
CE
=
-
60V
-
V
BE(on)
-
-
-
1.2
V
V
CE(sat)
-
-
-
0.25
V
I
C
/I
B
=
-
100mA/
-
10mA
V
CE
/I
B
=
-
1V/
-
100mA
V
CE
=
-
1V , I
C
=
-
10mA
h
FE
100
-
-
-
-
V
CE
=
-
1V , I
C
=
-
100mA
100
-
f
T
50
-
-
MHz
V
CE
=
-
1V , I
E
= 100mA , f = 100MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Base-emitter saturation voltage
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
SSTA56 / MMSTA56 / MPSA56
Transistors
!Electrical characteristic curves
0
400
300
200
100
500
2.0
0
0.4 0.8 1.2 1.6
I
B
=0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
Ta=25
C
I
C
-COLLECTOR CURRENT (
mA)
V
CE
-COLLECTOR-EMITTER VOLTAGE (
V)
Fig.1 Grounded emitter output
characteristics
1
10
100
1000
100
1000
10
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (
mA)
Ta=25
C
V
CC
=5V
3V
1V
Fig.2 DC current gain vs. collector
current (
)
1
10
100
1000
100
1000
10
h
FE
-DC CURRENT GAIN
I
C
-COLLECTOR CURRENT (
mA)
Ta=125
C
25
C
-
40
C
V
CE
=3V
Fig.3 DC current gain vs. collector
current (
)
1
10
100
1000
0.2
0.3
0.1
0
V
CE(SAT)
COLLECTOR EMITTER SATURATION VOLTAGE (
V)
I
C
-COLLECTOR CURRENT (
mA)
I
C
/
I
B
=10
Ta=125
C
25
C
-
40
C
Fig.4 Collector emitter saturation
voltage vs. collector current
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE (
V)
I
C
-COLLECTOR CURRENT (
mA)
Ta=25
C
I
C
/ I
B
=10
Fig.5 Base-emitter saturation
voltage vs. collector current
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0.6
1.0
1.4
0.2
0
V
BE(ON)
BASE EMITTER VOLTAGE (
V)
I
C
-COLLECTOR CURRENT (
mA)
V
CE
=3V
Ta=
-
40
C
125
C
25
C
Fig.6 Grounded emitter propagation
characteristics
0.5
1
10
50
10
500
100
5
CAPACITANCE (
pF)
REVERSE BIAS VOLTAGE (
V)
Ta=25
C
f=1MHz
Cib
Cob
Fig.7 Input/output capecitance
vs. voltage
1
10
100
1000
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT (
MHz)
I
C
-COLLECTOR CURRENT (
mA)
Ta=25
C
V
CE
=10V
Fig.8 Gain bandwidth product
vs. collector current
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