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Электронный компонент: STZ6.8T

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STZ6.8T
Diodes
Zener diode
STZ6.8T
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Applications
Constant voltage control
Noise suppression on signal line
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Features
1) Small surface mounting type. (SMD3)
2) Multiple diodes with common anode configuration.
3) High reliability.
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Construction
Silicon epitaxial planar
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Circuit
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External dimensions (Units : mm)
(All leads have the same dimensions)
2.8
0.2
1.6
0.3
0.6
0.15
0.4
0
0.1
1.1
0.8
0.1
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
+
0.2
-
0.1
+
0.1
-
0.06
+
0.1
-
0.05
ROHM : SMD3
EIAJ : SC-59
JEDEC : SOT-346
Z O P
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
Limits
200
Unit
mW
Tj
150
C
Tstg
-
55
+
150
C
P
Power dissipation
Junction temperature
Storage temperature
Total of 2 elements.
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
Z
I
R
6.47
-
-
-
7.14
0.5
V
A
I
Z
=5mA
V
R
=3.5V
Z
z
-
-
40
I
Z
=5mA
Z
ZK
-
-
60
I
Z
=0.5mA
Zener voltage
Reverse current
Operating resistance
Rising operating resistance
STZ6.8T
Diodes
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Electrical characteristic curves (Ta=25
C)
2
3
4
5
6
7
8
1
10
100
1m
10m
100m
100n
ZENER CURRENT : Iz (A)
ZENER VOLTAGE : Vz (V)
Fig.1 Zener voltage characteristics
-
20
C 25
C
70
C
0
0
25
50
100
150
100
200
300
POWER DISSIPATION : Pd (mW)
AMBIENT TEMPERATURE : Ta (C)
Fig.2 Derating curve