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Электронный компонент: UMB6N

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EMB6 / UMB6N
Transistors
General purpose (dual digital transistors)
EMB6 / UMB6N
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Feature
1) Two DTA144E chips in a EMT or UMT package.
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Equivalent circuit
EMB6 / UMB6N
R
1
R
2
R
2
R
1
(1)
(3)
(4) (5)
(6)
(2)
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Package, marking, and packaging specifications
Type
EMB6
EMT6
B6
T2R
8000
UMB6N
UMT6
B6
TR
3000
Package
Marking
Code
Basic ordering unit (pieces)
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Absolute maximum ratings (Ta=25
C)
Parameter
1 120mW per element must not be exceeded.
Symbol
V
CC
V
IN
I
O
Pd
Tj
Tstg
Limits
-
50
-
40
10
50
150(TOTAL)
150
-
55
~
+
150
Unit
V
V
mA
mW
1
C
C
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
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External dimensions (Units : mm)
ROHM : EMT6
EMB6
ROHM : UMT6
EIAJ : SC-88
UMB6N
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Input resistance
V
I (off)
V
I (on)
V
O (on)
I
I
I
O (off)
G
I
f
T
R
1
-
-
3.0
-
-
-
68
32.9
0.8
-
-
-
0.1
-
-
-
47
-
-
1.0
-
0.5
-
-
0.3
-
0.18
-
0.5
-
61.1
1.2
V
V
mA
A
-
MHz
k
R
2
/
R
1
-
250
-
-
V
CC
=-
5V, I
O
=-
100
A
V
O
=-
0.3V, I
O
=-
2mA
I
O
=-
10mA, I
I
=-
0.5mA
V
I
=-
5V
V
CC
=-
50V, V
I
=
0V
I
O
=-
5mA, V
O
=-
5V
V
CE
=-
10V, I
E
=
5mA, f
=
100MHz
Transition frequency of the device.
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Resistance ratio