UMF9N
Transistors
1/5
Power management (dual transistors)
UMF9N
2SC5585 and 2SK3019 are housed independently in a UMT package.
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Application
Power management circuit
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Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
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Structure
Silicon epitaxial planar transistor
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Equivalent circuits
Tr2
Tr1
(1)
(2)
(3)
(4)
(5)
(6)
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Packaging specifications
UMF9N
UMT6
F9
TR
3000
Type
Package
Marking
Code
Basic ordering unit (pieces)
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External dimensions (Units : mm)
ROHM : UMT6
EIAJ : SC-88
0
~
0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
UMF9N
Transistors
2/5
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Absolute maximum ratings (Ta=25
C)
Tr1
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
500
150(TOTAL)
150
-
55~
+
150
1.0
1
2
Unit
V
V
V
mA
A
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
1 Single pulse P
W
=1ms
2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Tr2
Parameter
1 P
W
10ms Duty cycle
50%
2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Symbol
V
DSS
V
GSS
I
D
I
DRP
P
D
Tch
Tstg
Limits
30
20
100
200
150(TOTAL)
150
-
55~
+
150
1
1
2
Unit
V
V
mA
I
DP
200
mA
mA
I
DR
100
mA
mW
C
C
Drain-source voltage
Gate-source voltage
Drain current
Reverse drain
current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Continuous
Pulsed
Pulsed
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!
!
!
Electrical characteristics (Ta=25
C)
Tr1
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0mA, f
=
1MHz
Transition frequency
f
T
-
320
-
MHz
V
CE
=
2V, I
E
=-
10mA, f
=
100MHz
BV
CEO
12
-
-
V
I
C
=
1mA
Collector-emitter breakdown voltage
BV
CBO
15
-
-
V
I
C
=
10
A
Collector-base breakdown voltage
BV
EBO
6
-
-
V
I
E
=
10
A
Emitter-base breakdown voltage
I
CBO
-
-
100
nA
V
CB
=
15V
Collector cut-off current
I
EBO
-
-
100
nA
V
EB
=
6V
Emitter cut-off current
V
CE(sat)
-
100
250
mV
I
C
=
200mA, I
B
=
10mA
Collector-emitter saturation voltage
h
FE
270
-
680
-
V
CE
=
2V, I
C
=
10mA
DC current gain
Cob
-
7.5
-
pF
Collector output capacitance
Tr2
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Input capacitance
C
iss
-
13
-
pF
V
DS
=
5V, V
GS
=
0V, f
=
1MHz
I
GSS
-
-
1
A
V
GS
=
20V, V
DS
=
0V
Gate-source leakage
V
(BR)DSS
30
-
-
V
I
D
=
10
A, V
GS
=
0V
I
DSS
-
-
1.0
A
V
DS
=
30V, V
GS
=
0V
Zero gate voltage drain current
Drain-source breakdown voltage
V
GS(th)
0.8
-
1.5
V
V
DS
=
3V, I
D
=
100
A
Gate-threshold voltage
R
DS(on)
-
5
8
I
D
=
10mA, V
GS
=
4V
-
7
13
I
D
=
1mA, V
GS
=
2.5V
Static drain-source
on-state resistance
C
oss
-
9
-
pF
Output capacitance
|Y
fs
|
20
-
-
ms
V
DS
=
3V, I
D
=
10mA
Forward transfer admittance
C
rss
-
4
-
pF
Reverce transfer capacitance
Rise time
t
r
-
35
-
ns
t
d(off)
-
80
-
ns
Turn-off delay time
t
d(on)
-
15
-
ns
I
D
=
10mA, V
DD
5V,
V
GS
=
5V, R
L
=
500
,
R
GS
=
10
Turn-on delay time
t
f
-
80
-
ns
Fall time
UMF9N
Transistors
3/5
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Electrical characteristic curves
Tr1
Fig.1 Grounded emitter propagation
characteristics
0
1
100
1000
10
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
1.4
1.0
1.2
0.4
0.6
0.8
0.2
V
CE
=2V
Pulsed
Ta=125
C
Ta=25
C
Ta=
-
40
C
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.2 DC current gain vs.
collector current
1
DC CURRENT GAIN : h
FE
10
1000
100
Ta
=
125
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=
2V
Pulsed
Fig.3 Collector-emitter saturation voltage
vs. collector current (
)
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
10
1000
100
Ta=25
C
Pulsed
I
C
/I
B
=
50
I
C
/I
B
=
20
I
C
/I
B
=
10
Fig.4 Collector-emitter saturation voltage
vs. collector current (
)
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
1
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
10
1000
100
Ta=125
C
25
C
-
40
C
I
C
/I
B
=
20
Pulsed
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
10
BASER SATURATION VOLTAGE : V
BE (sat)
(mV)
100
10000
1000
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
Fig.6 Gain bandwidth product
vs. emitter current
1
10
100
1000
EMITTER CURRENT : I
E
(mA)
1
TRANSITION FREQUENCY : f
T
(MHz)
10
1000
100
V
CE
=
2V
Ta
=
25
C
Pulsed
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1
10
100
0.1
1
10
100
1000
Ta
=
25
C
f
=
1MHz
I
E
=
0A
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Cib
Cob
0.01
0.1
1
10
100
EMITTER CURRENT : V
CE
(V)
Fig.8 Safe operation area
0.001
TRANSITION FREQUENCY : I
C
(A)
0.01
10
0.1
1
Ta
=
25
C
Single Pulsed
DC
100ms
10ms
1ms
UMF9N
Transistors
4/5
Tr2
0
4
0.1m
100m
DRAIN CURRENT : I
D
(A)
GATE-SOURCE VOLTAGE : V
GS
(V)
1
10m
3
2
1m
0.2m
0.5m
2m
5m
50m
20m
200m
Ta
=
125
C
75
C
25
C
-
25
C
V
DS
=
3V
Pulsed
Fig.9 Typical transfer characteristics
-
50
0
0
1
1.5
2
GATE THRESHOLD VOLTAGE : V
GS(th)
(V)
CHANNEL TEMPERATURE : Tch (
C)
0.5
-
25
25
50
75
100
125
150
Fig.10 Gate threshold voltage vs.
channel temperature
V
DS
=
3V
I
D
=
0.1mA
Pulsed
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
5
10
20
Fig.11 Static drain-source on-state
resistance vs. drain current (
)
Ta
=
125
C
75
C
25
C
-
25
C
V
GS
=
4V
Pulsed
0.001
1
2
50
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
DRAIN CURRENT : I
D
(A)
0.5
0.002
0.005 0.01 0.02
0.05
0.1
0.2
0.5
5
10
20
Fig.12 Static drain-source on-state
resistance vs. drain current (
)
Ta
=
125
C
75
C
25
C
-
25
C
V
GS
=
2.5V
Pulsed
0
5
10
15
20
0
5
10
15
GATE-SOURCE VOLTAGE : V
GS
(V)
I
D
=
0.1A
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
Fig.13 Static drain-source on-state
resistance vs. gate-source
voltage
Ta
=
25
C
Pulsed
I
D
=
0.05A
-
50
0
25
150
0
3
6
9
CHANNEL TEMPERATURE : Tch (
C)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS(on)
(
)
-
25
50
75
100 125
2
1
4
5
7
8
Fig.14 Static drain-source on-state
resistance vs. channel
temperature
V
GS
=
4V
Pulsed
I
D
=
100mA
I
D
=
50mA
0.0001
0.001
0.01
0.02
0.5
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
DRAIN CURRENT : I
D
(A)
0.005
0.0002
0.0005 0.001 0.002
0.005 0.01 0.02
0.05
0.05
0.1
0.2
0.1
0.2
0.5
0.002
Ta
=-
25
C
25
C
75
C
125
C
V
DS
=
3V
Pulsed
Fig.15 Forward transfer admittance vs.
drain current
200m
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Fig.16 Reverse drain current vs.
source-drain voltage (
)
V
GS
=
0V
Pulsed
Ta
=
125
C
75
C
25
C
-
25
C
200m
REVERSE DRAIN CURRENT : I
DR
(A)
SOURCE-DRAIN VOLTAGE : V
SD
(V)
1.5
1
0.5
0
100m
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
Fig.17 Reverse drain current vs.
source-drain voltage (
)
Ta
=
25
C
Pulsed
V
GS
=
4V
0V
UMF9N
Transistors
5/5
0.1
1
2
50
CAPACITANCE : C (pF)
DRAIN-SOURCE VOLTAGE : V
DS
(V)
0.5
0.2
0.5
1
2
5
10
20
50
5
10
20
Fig.18 Typical capacitance vs.
drain-source voltage
C
iss
C
oss
C
rss
Ta
=
25
C
f
=
1MH
Z
V
GS
=
0V
0.1
10
20
500
SWITHING TIME : t (ns)
DRAIN CURRENT : I
D
(mA)
5
0.2
0.5
1
2
5
10
20
50
50
100
200
1000
2
100
Ta
=
25
C
V
DD
=
5V
V
GS
=
5V
R
G
=
10
Pulsed
t
d(off)
t
r
t
d(on)
t
f
Fig.19 Switching characteristics
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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