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Электронный компонент: UMH7N

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UMH7N / IMH7A
Transistors
General purpose (dual digital transistors)
UMH7N / IMH7A
!Features
1) Includes two DTC143T transistors in a single UMT
package.
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Tj
Tstg
Limits
50
50
5
100
150 (TOTAL)
150
-
55
+
150
Unit
V
V
V
mA
mW
C
C
1
300 (TOTAL)
UMH7N
FMG13, IMH7A
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
!
!
!
!Package, marking, and Packaging specifications
Part No.
UMH7N
UMT6
H7
TR
3000
IMH7A
SMT6
H7
T108
3000
Package
Marking
Code
Basic ordering unit (pieces)
!
!
!
!External dimensions
(Units : mm)
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
IMH7A
UMH7N
EIAJ : SC-74
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
!
!
!
!Circuit diagram
UMH7N
IMH7A
R
1
R
1
R
1
R
1
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
50
50
5
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.5
0.3
V
V
V
A
A
V
I
C
=50
A
I
C
=1mA
I
E
=50
A
V
CB
=50V
V
EB
=4V
I
C
/ I
B
=5mA
/ 0.25mA
h
FE
100
250
600
-
V
CE
/ I
C
=5V / 1mA
R
1
3.29
4.7
-
6.11
k
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance