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Электронный компонент: UMT1N

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EMT1 / UMT1N / IMT1A
Transistors
Rev.A 1/3
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A

Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent,
eliminating interference.

Structure
Epitaxial planar type
PNP silicon transistor

Equivalent circuit
EMT1 / UMT1N
IMT1A
Tr
2
Tr
1
(3)
(2)
(1)
(4)
(5)
(6)
Tr
2
Tr
1
(4)
(5)
(6)
(3)
(2)
(1)


The following characteristics apply to both
Tr
1
and Tr
2
.

Absolute maximum ratings (Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
P
C
EMT1, UMT1N
IMT1A
Limits
-
60
-
50
-
6
-
150
150
-
55 to +150
150 (TOTAL)
300 (TOTAL)
Unit
V
V
V
mA
C
C
mW
1
2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.

External dimensions (Unit : mm)
ROHM : EMT6
EMT1
ROHM : UMT6
EIAJ : SC-88
UMT1N
ROHM : SMT6
EIAJ : SC-74
IMT1A
Abbreviated symbol : T1
Abbreviated symbol : T1
Abbreviated symbol : T1
0.22
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
Each lead has same dimensions
0to0.1
( 6
)
2.0
1.3
0.9
0.15
0.7
0.1Min.
2.1
0.65
0.2
1.25
( 1
)
0.65
( 4
)
( 3
)
( 2
)
( 5
)
Each lead has same dimensions
( 6
)
( 5
)
( 4
)
0.3to0.6
0.15
0.3
1.1
0.8
0to0.1
( 3
)
2.8
1.6
1.9
2.9
0.95
( 2
)
0.95
( 1
)
Each lead has same dimensions












EMT1 / UMT1N / IMT1A
Transistors
Rev.A 2/3
Electrical characteristics (Ta = 25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
-
60
-
50
-
6
-
-
120
-
-
-
-
-
-
-
-
-
-
140
4
-
-
-
-
0.1
-
0.1
560
-
0.5
-
5
V
I
C
=
-
50
A
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
60V
V
EB
=
-
6V
V
CE
=
-
6V, I
C
=
-
1mA
V
CE
=
-
12V, I
E
= 2mA, f = 100MHz
I
C
/I
B
=
-
50mA/
-
5mA
V
CB
=
-
12V, I
E
= 0A, f = 1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance

Packaging specifications
Package
Taping
Code
UMT1N
EMT1
Type
IMT1A
TR
3000
T2R
8000
-
-
-
T108
3000
-
-
-
Basic ordering unit (pieces)

Electrical characteristic curves
-0.2
COLLECTOR CURRENT : Ic
(mA)
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
V
CE
=
-
6V
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
Ta = 100
C
25
C
-
40
C
-0.4
-4
-8
-1.2
0
-2
-6
-10
-0.8
-1.6
-2.0
-3.5
A
-7.0
-10.5
-14.0
-17.5
-21.0
-24.5
-28.0
-31.5
I
B
= 0
Ta = 25
C
-35.0
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics (
)
-40
-80
-5
-3
-4
-2
-1
-20
-60
-100
0
I
B
= 0
Ta = 25
C
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.3 Grounded emitter output
characteristics (
)
-50
A
-100
-150
-200
-250
-500
-450
-400
-350
-300
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
DC CURRENT GAIN : h
FE
Ta = 25
C
V
CE
= -5V
-3V
-1V
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs. collector
current (
)
500
200
100
50
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.5 DC current gain vs. collector
current (
)
V
CE
= -6V
Ta = 100
C
-40
C
25
C
-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
Ta = 25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (
)
I
C
/I
B
= 50
20
10
EMT1 / UMT1N / IMT1A
Transistors
Rev.A 3/3

-0.1
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-1
-0.5
-0.2
-0.05
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (
)
l
C
/l
B
= 10
Ta = 100
C
25
C
-40
C
50
100
0.5
20
50
100
200
500
1000
1
2
5
10
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
Ta = 25
C
V
CE
= -12V
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (
pF)
EMITTER INPUT CAPACITANCE : Cib (
pF)
Collector output capacitance vs.
Emitter input capacitance vs.
collector-base voltage
emitter-base voltage
Fig.9
-0.5
-20
2
5
10
-1
-2
-5
-10
20
Cib
Cob
Ta = 25
C
f
= 1MHz
I
E
= 0A
I
C
= 0A
Appendix
Appendix1-Rev1.1


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The contents described herein are subject to change without notice. The specifications for the
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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
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